A method of fabricating a semiconductor integrated circuit device includes forming a gate pattern on a semiconductor substrate, the gate pattern having a gate insulation film and a gate electrode. A spacer is formed on sidewalls of the gate pattern. A silicide layer is formed by a silicide process on at least one portion of the semiconductor substrate exposed by the gate pattern and the spacer, the silicide layer being formed using a silicide process. A stress buffer layer is formed on a resultant structure having the silicide layer. A stress film is formed on the stress buffer layer.