发明申请
US20110306203A1 INTERCONNECT STRUCTURE AND METHOD OF MANUFACTURING A DAMASCENE STRUCTURE
审中-公开
互连结构和制造大分子结构的方法
- 专利标题： INTERCONNECT STRUCTURE AND METHOD OF MANUFACTURING A DAMASCENE STRUCTURE
- 专利标题（中）： 互连结构和制造大分子结构的方法
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申请号： US13218035申请日： 2011-08-25
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公开(公告)号： US20110306203A1公开(公告)日： 2011-12-15
- 发明人: Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
- 申请人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
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