One aspect provides a method of standardized data creation and analysis of semiconductor technology node characteristics. In one embodiment, the method includes: (1) designing representative benchmark circuits for a clock path, a data path and a flip-flop path, (2) establishing at least one standard sensitization and measurement rule for delay and power for the representative benchmark circuits and across corners in the technology nodes, (3) performing a simulation by sweeping through a range of values and at predetermined intervals across the corners, (4) extracting data from the simulation, (5) writing the data to a databank and (6) parsing and interpreting the data to produce at least one report.