发明申请
US20110309333A1 SEMICONDUCTOR DEVICES FABRICATED BY DOPED MATERIAL LAYER AS DOPANT SOURCE
有权
由掺杂材料层组成的半导体器件作为掺杂源
- 专利标题: SEMICONDUCTOR DEVICES FABRICATED BY DOPED MATERIAL LAYER AS DOPANT SOURCE
- 专利标题(中): 由掺杂材料层组成的半导体器件作为掺杂源
-
申请号: US12819440申请日: 2010-06-21
-
公开(公告)号: US20110309333A1公开(公告)日: 2011-12-22
- 发明人: Kangguo Cheng , Bruce B. Doris , Balasubramanian S. Haran , Ali Khakifirooz , Ghavam G. Shahidi
- 申请人: Kangguo Cheng , Bruce B. Doris , Balasubramanian S. Haran , Ali Khakifirooz , Ghavam G. Shahidi
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/775
- IPC分类号: H01L29/775 ; H01L21/34 ; H01L27/12 ; H01L21/84
摘要:
A method of forming a semiconductor device is provided, in which the dopant for the source and drain regions is introduced from a doped dielectric layer. In one example, a gate structure is formed on a semiconductor layer of an SOI substrate, in which the thickness of the semiconductor layer is less than 10 nm. A doped dielectric layer is formed over at least the portion of the semiconductor layer that is adjacent to the gate structure. The dopant from the doped dielectric layer is driven into the portion of the semiconductor layer that is adjacent to the gate structure. The dopant diffused into the semiconductor provides source and drain extension regions.