发明申请
US20110309334A1 Graphene/Nanostructure FET with Self-Aligned Contact and Gate
有权
具有自对准接触和栅极的石墨烯/纳米结构FET
- 专利标题： Graphene/Nanostructure FET with Self-Aligned Contact and Gate
- 专利标题（中）： 具有自对准接触和栅极的石墨烯/纳米结构FET
-
申请号： US12820341申请日： 2010-06-22
-
公开(公告)号： US20110309334A1公开(公告)日： 2011-12-22
- 发明人: Josephine Chang , Isaac Lauer , Jeffrey Sleight
- 申请人： Josephine Chang , Isaac Lauer , Jeffrey Sleight
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/76 ; H01L21/84
摘要：
A method for forming a field effect transistor (FET) includes depositing a channel material on a substrate, the channel material comprising one of graphene or a nanostructure; forming a gate over a first portion of the channel material; forming spacers adjacent to the gate; depositing a contact material over the channel material, gate, and spacers; depositing a dielectric material over the contact material; removing a portion of the dielectric material and a portion of the contact material to expose the top of the gate; recessing the contact material; removing the dielectric material; and patterning the contact material to form a self-aligned contact for the FET, the self-aligned contact being located over a source region and a drain region of the FET, the source region and the drain region comprising a second portion of the channel material.