发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13052254申请日： 2011-03-21
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公开(公告)号： US20110309439A1公开(公告)日： 2011-12-22
- 发明人: Tomoko Matsudai , Koichi Endo , Kumiko Sato , Norio Yasuhara
- 申请人： Tomoko Matsudai , Koichi Endo , Kumiko Sato , Norio Yasuhara
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-140237 20100621
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
According to one embodiment, a semiconductor device includes a semiconductor substrate, a first conductivity-type region, a second conductivity-type source region, a gate insulating film and a gate electrode. The first conductivity-type region is provided in an upper layer portion of the semiconductor substrate. The second conductivity-type source region and a second conductivity-type drain region are arranged by being separated from each other in an upper layer portion of the first conductivity-type region. The gate insulating film is provided on the semiconductor substrate. The gate electrode is provided on the gate insulating film. An effective concentration of impurities in a channel region corresponding to a region directly below the gate electrode in the first conductivity-type region has a maximum at an interface between the gate insulating film and the channel region, and decreases toward a lower part of the channel region.
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