发明申请
- 专利标题： SEMICONDUCTOR DEVICE INCLUDING CELL REGION AND PERIPHERAL REGION HAVING HIGH BREAKDOWN VOLTAGE STRUCTURE
- 专利标题（中）： 包含高电压电压结构的电池区域和外围区域的半导体器件
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申请号： US13164246申请日： 2011-06-20
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公开(公告)号： US20110309464A1公开(公告)日： 2011-12-22
- 发明人: Kensaku YAMAMOTO , Naohiro Suzuki , Hidefumi Takaya , Masahiro Sugimoto , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
- 申请人： Kensaku YAMAMOTO , Naohiro Suzuki , Hidefumi Takaya , Masahiro Sugimoto , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
- 申请人地址： JP Toyota-city JP Kariya-city
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人地址： JP Toyota-city JP Kariya-city
- 优先权： JP2010-141744 20100622
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.
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