SIC semiconductor device and method for manufacturing the same
    8.
    发明授权
    SIC semiconductor device and method for manufacturing the same 有权
    SIC半导体器件及其制造方法

    公开(公告)号:US08710586B2

    公开(公告)日:2014-04-29

    申请号:US13229892

    申请日:2011-09-12

    IPC分类号: H01L29/66 H01L29/15

    摘要: A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

    摘要翻译: SiC半导体器件包括:依次堆叠的衬底,漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。 高浓度第二源区比低浓度第一源区浅,并且具有被层间绝缘膜覆盖的部分,其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。 第二部分上的金属硅化物膜的厚度大于第一部分。

    SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    SIC半导体器件及其制造方法

    公开(公告)号:US20120061682A1

    公开(公告)日:2012-03-15

    申请号:US13229892

    申请日:2011-09-12

    IPC分类号: H01L29/24 H01L21/336

    摘要: A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

    摘要翻译: SiC半导体器件包括:依次堆叠的衬底,漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。 高浓度第二源区比低浓度第一源区浅,并且具有被层间绝缘膜覆盖的部分,其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。 第二部分上的金属硅化物膜的厚度大于第一部分。