发明申请
- 专利标题: Embedded 3D Interposer Structure
- 专利标题(中): 嵌入式3D内插结构
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申请号: US12823851申请日: 2010-06-25
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公开(公告)号: US20110316147A1公开(公告)日: 2011-12-29
- 发明人: Ying-Ching Shih , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
- 申请人: Ying-Ching Shih , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/488
- IPC分类号: H01L23/488
摘要:
A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.
公开/授权文献
- US08426961B2 Embedded 3D interposer structure 公开/授权日:2013-04-23
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