发明申请
- 专利标题： SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体基板和制造半导体器件的方法
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申请号： US13165063申请日： 2011-06-21
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公开(公告)号： US20110318881A1公开(公告)日： 2011-12-29
- 发明人: Akihiro CHIDA , Yoshiaki OIKAWA , Chiho KAWANABE
- 申请人： Akihiro CHIDA , Yoshiaki OIKAWA , Chiho KAWANABE
- 申请人地址： JP Atsugi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi
- 优先权： JP2010-144127 20100624
- 主分类号： H01L21/50
- IPC分类号： H01L21/50
摘要：
Provided is a method for manufacturing a semiconductor device, which prevents waste generation from being caused peeling of films and prevents failure of peeling from being caused by waste due to peeling of films. A first semiconductor substrate is used which has a structure in which a peeling layer is not formed in a section subjected to a first dividing treatment, so that the peeling layer is not exposed at the end surface of a second semiconductor substrate when the second semiconductor substrate is cut out of the first semiconductor substrate. In addition, a supporting material is provided on a layer to be peeled of the second semiconductor substrate before the second semiconductor substrate is subjected to a second dividing treatment.
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