Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13230997Application Date: 2011-09-13
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Publication No.: US20120001244A1Publication Date: 2012-01-05
- Inventor: Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO
- Applicant: Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO
- Applicant Address: JP Atsugi-shi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP11-033623 19990212
- Main IPC: H01L27/06
- IPC: H01L27/06
![SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR](/abs-image/US/2012/01/05/US20120001244A1/abs.jpg.150x150.jpg)
Abstract:
In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.
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