- 专利标题： HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY
-
申请号： US13235224申请日： 2011-09-16
-
公开(公告)号： US20120002463A1公开(公告)日： 2012-01-05
- 发明人: Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
- 申请人： Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
- 申请人地址： US CA Fremont
- 专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人地址： US CA Fremont
- 主分类号： G11C11/14
- IPC分类号： G11C11/14
摘要：
A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.
公开/授权文献
- US08724413B2 High capacity low cost multi-state magnetic memory 公开/授权日：2014-05-13
信息查询
