发明申请
- 专利标题: APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION
- 专利标题(中): 用于原子层沉积的装置和方法
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申请号: US13060435申请日: 2009-08-25
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公开(公告)号: US20120003396A1公开(公告)日: 2012-01-05
- 发明人: Diederik Jan Maas , Bob Van Someren , Axel Sebastiaan Lexmond , Carolus Ida Maria Antonlus Spee , Antonie Ellert Duisterwinkel , Adrianus Johannes Petrus Maria Meer
- 申请人: Diederik Jan Maas , Bob Van Someren , Axel Sebastiaan Lexmond , Carolus Ida Maria Antonlus Spee , Antonie Ellert Duisterwinkel , Adrianus Johannes Petrus Maria Meer
- 申请人地址: NL Delft
- 专利权人: NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETEN SCHAPPELIJK ONDERZOEK TNO
- 当前专利权人: NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETEN SCHAPPELIJK ONDERZOEK TNO
- 当前专利权人地址: NL Delft
- 优先权: EP08163090.7 20080827
- 国际申请: PCT/NL2009/050511 WO 20090825
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; C23C16/48 ; C23C16/50
摘要:
Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.
公开/授权文献
- US11549180B2 Apparatus and method for atomic layer deposition 公开/授权日:2023-01-10