发明申请
US20120003799A1 Methods of manufacturing semiconductor devices with Si and SiGe epitaxial layers
有权
制造具有Si和SiGe外延层的半导体器件的方法
- 专利标题: Methods of manufacturing semiconductor devices with Si and SiGe epitaxial layers
- 专利标题(中): 制造具有Si和SiGe外延层的半导体器件的方法
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申请号: US13137733申请日: 2011-09-08
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公开(公告)号: US20120003799A1公开(公告)日: 2012-01-05
- 发明人: Jin-bum Kim , Si-young Choi , Hyung-Ik Lee , Ki-hong Kim , Yong-koo Kyoung
- 申请人: Jin-bum Kim , Si-young Choi , Hyung-Ik Lee , Ki-hong Kim , Yong-koo Kyoung
- 优先权: KR10-2008-0115801 20081120
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
Methods of manufacturing semiconductor devices may include forming a first layer on a first active region (P-channel FET), forming a second layer on a second active region (N-channel FET), the first and second layers including a silicon germanium (SiGe) epitaxial layer sequentially stacked on a silicon (Si) epitaxial layer, forming a first contact hole in an interlayer insulating film including a first lower region exposing the SiGe epitaxial layer of the first layer, forming a second contact hole in the interlayer insulating film including a second lower region penetrating through the SiGe epitaxial layer of the second layer and exposing the Si epitaxial layer of the second layer, forming a first metal silicide film including germanium (Ge) in the first lower region, forming a second metal silicide film not including Ge in the second lower region simultaneously with the forming of the first metal silicide film.