Invention Application
- Patent Title: TRANSISTOR WITH ASYMMETRIC SILICON GERMANIUM SOURCE REGION
- Patent Title (中): 具有不对称硅锗源区的晶体管
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Application No.: US13230083Application Date: 2011-09-12
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Publication No.: US20120003802A1Publication Date: 2012-01-05
- Inventor: Jian Chen , James F. Buller , Akif Sultan
- Applicant: Jian Chen , James F. Buller , Akif Sultan
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The present invention is directed to a transistor with an asymmetric silicon germanium source region, and various methods of making same. In one illustrative embodiment, the transistor includes a gate electrode formed above a semiconducting substrate comprised of silicon, a doped source region comprising a region of epitaxially grown silicon that is doped with germanium formed in the semiconducting substrate and a doped drain region formed in the semiconducting substrate.
Public/Granted literature
- US08377781B2 Transistor with asymmetric silicon germanium source region Public/Granted day:2013-02-19
Information query
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