发明申请
- 专利标题： METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 制造半导体基板的方法
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申请号： US13255314申请日： 2010-09-28
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公开(公告)号： US20120003823A1公开(公告)日： 2012-01-05
- 发明人: Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
- 申请人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
- 申请人地址： JP Osaka-shi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2009-259790 20091113
- 国际申请： PCT/JP2010/066832 WO 20100928
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed.
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