Invention Application
- Patent Title: Self-Aligned Contacts in Carbon Devices
- Patent Title (中): 碳装置中的自对准触点
-
Application No.: US12832224Application Date: 2010-07-08
-
Publication No.: US20120007054A1Publication Date: 2012-01-12
- Inventor: Josephine B. Chang , Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
- Applicant: Josephine B. Chang , Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L27/12 ; H01L29/24 ; H01L21/86 ; H01L21/04
Abstract:
A method for forming a semiconductor device includes forming a carbon material on a substrate, forming a gate stack on the carbon material, removing a portion of the substrate to form at least one cavity defined by a portion of the carbon material and the substrate, and forming a conductive contact in the at least one cavity.
Public/Granted literature
- US08404539B2 Self-aligned contacts in carbon devices Public/Granted day:2013-03-26
Information query
IPC分类:
