发明申请
- 专利标题： NONVOLATILE MEMORY DEVICE
- 专利标题（中）： 非易失性存储器件
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申请号： US13052531申请日： 2011-03-21
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公开(公告)号： US20120007163A1公开(公告)日： 2012-01-12
- 发明人: Hiroshi Akahori , Kiyohito Nishihara , Masaki Kondo , Yingkang Zhang , Shigeo Kondo , Hidenobu Nagashima , Kazuaki Iwasawa , Takashi Ichikawa
- 申请人： Hiroshi Akahori , Kiyohito Nishihara , Masaki Kondo , Yingkang Zhang , Shigeo Kondo , Hidenobu Nagashima , Kazuaki Iwasawa , Takashi Ichikawa
- 优先权： JP2010-154850 20100707
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
According to one embodiment, a nonvolatile memory device includes a substrate, first and second tunnel insulating films, first and second floating gate electrodes, an intergate insulating film and a control gate electrode. The substrate has first and second active regions isolated from each other by an element isolation trench. The first and second tunnel insulating films are located in the first and second active regions, respectively. The first and second floating gate electrodes are located on the first and second tunnel insulating films, respectively. The intergate insulating film includes a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer. The control gate electrode is located on the intergate insulating film.
公开/授权文献
- US08723245B2 Nonvolatile memory device 公开/授权日：2014-05-13
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