发明申请
US20120009792A1 SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME
审中-公开
SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNISSION STRUCTURE WITH THE SAME
- 专利标题： SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME
- 专利标题（中）： SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNISSION STRUCTURE WITH THE SAME
-
申请号： US13240059申请日： 2011-09-22
-
公开(公告)号： US20120009792A1公开(公告)日： 2012-01-12
- 发明人: Jung-Dae Park , Young You , Tae-Hyo Choi , Hun-Jung Yi , Kun-Hyung Lee
- 申请人： Jung-Dae Park , Young You , Tae-Hyo Choi , Hun-Jung Yi , Kun-Hyung Lee
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2007-0068569 20070709
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/306
摘要：
A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).
信息查询
IPC分类:
