发明申请
- 专利标题: POST-ASH SIDEWALL HEALING
- 专利标题(中): 后腰围护理
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申请号: US12909167申请日: 2010-10-21
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公开(公告)号: US20120009796A1公开(公告)日: 2012-01-12
- 发明人: Zhenjiang Cui , Anchuan Wang , Mehul Naik , Nitin Ingle , Young Lee , Shankar Venkataraman
- 申请人: Zhenjiang Cui , Anchuan Wang , Mehul Naik , Nitin Ingle , Young Lee , Shankar Venkataraman
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/3065
- IPC分类号: H01L21/3065
摘要:
Methods of decreasing the effective dielectric constant present between two conducting components of an integrated circuit are described. The methods involve the use of a gas phase etch which is selective towards the oxygen-rich portion of the low-K dielectric layer. The etch rate attenuates as the etch process passes through the relatively high-K oxygen-rich portion and reaches the low-K portion. The etch process may be easily timed since the gas phase etch process does not readily remove the desirable low-K portion.