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    POST-ASH SIDEWALL HEALING
    1.
    发明申请
    POST-ASH SIDEWALL HEALING 审中-公开
    后腰围护理

    公开(公告)号：US20120009796A1

    公开(公告)日：2012-01-12

    申请号：US12909167

    申请日：2010-10-21

    申请人： Zhenjiang Cui ,  Anchuan Wang ,  Mehul Naik ,  Nitin Ingle ,  Young Lee ,  Shankar Venkataraman

    发明人： Zhenjiang Cui ,  Anchuan Wang ,  Mehul Naik ,  Nitin Ingle ,  Young Lee ,  Shankar Venkataraman

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76814

    摘要： Methods of decreasing the effective dielectric constant present between two conducting components of an integrated circuit are described. The methods involve the use of a gas phase etch which is selective towards the oxygen-rich portion of the low-K dielectric layer. The etch rate attenuates as the etch process passes through the relatively high-K oxygen-rich portion and reaches the low-K portion. The etch process may be easily timed since the gas phase etch process does not readily remove the desirable low-K portion.

    摘要翻译： 描述了降低集成电路的两个导电部件之间存在的有效介电常数的方法。 该方法包括使用对低K电介质层的富氧部分具有选择性的气相蚀刻。 当蚀刻工艺通过较高K富氧部分并达到低K部分时，蚀刻速率衰减。 由于气相蚀刻工艺不容易除去所需的低K部分，所以蚀刻工艺可以容易地定时。

    AIR GAP FORMATION AND INTEGRATION USING A PATTERNING CAP
    4.
    发明申请
    AIR GAP FORMATION AND INTEGRATION USING A PATTERNING CAP 有权
    空气隙形成和整合使用图案盖

    公开(公告)号：US20090309230A1

    公开(公告)日：2009-12-17

    申请号：US12336884

    申请日：2008-12-17

    申请人： ZHENJIANG CUI ,  Mehul Naik ,  Christopher D. Bencher ,  Kenneth MacWilliams

    发明人： ZHENJIANG CUI ,  Mehul Naik ,  Christopher D. Bencher ,  Kenneth MacWilliams

    IPC分类号： H01L21/768 ,  H01L23/535

    CPC分类号： H01L23/5222 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap.

    摘要翻译： 膜图案及其结果的方法。 在一个实施方案中，在诸如镶嵌层的基底上形成无定形碳掩模。 在无定形碳掩模上沉积间隔层，并且蚀刻间隔层以形成间隔物并暴露无定形碳掩模。 无定形碳掩模被选择性地去除到间隔物以暴露衬底层。 间隔填充层沉积在间隔物周围以覆盖基底层，但暴露间隔物。 选择性地移除间隔物以在衬底上形成间隙填充掩模。 间隙填充掩模的图案在一个实施方式中转移到镶嵌层中以去除IMD的至少一部分并形成气隙。

    Air gap formation and integration using a patterning cap
    6.
    发明授权
    Air gap formation and integration using a patterning cap 有权
    使用图案化盖的气隙形成和一体化

    公开(公告)号：US07811924B2

    公开(公告)日：2010-10-12

    申请号：US12336884

    申请日：2008-12-17

    申请人： Zhenjiang Cui ,  Mehul Naik ,  Christopher D. Bencher ,  Kenneth MacWilliams

    发明人： Zhenjiang Cui ,  Mehul Naik ,  Christopher D. Bencher ,  Kenneth MacWilliams

    IPC分类号： H01L21/4763

    CPC分类号： H01L23/5222 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap.

    摘要翻译： 膜图案及其结果的方法。 在一个实施方案中，在诸如镶嵌层的基底上形成无定形碳掩模。 在无定形碳掩模上沉积间隔层，并且蚀刻间隔层以形成间隔物并暴露无定形碳掩模。 无定形碳掩模被选择性地去除到间隔物以暴露衬底层。 间隔填充层沉积在间隔物周围以覆盖基底层，但暴露间隔物。 选择性地移除间隔物以在衬底上形成间隙填充掩模。 间隙填充掩模的图案在一个实施方式中转移到镶嵌层中以去除IMD的至少一部分并形成气隙。

    SELF ALIGNED TRIPLE PATTERNING
    7.
    发明申请
    SELF ALIGNED TRIPLE PATTERNING 审中-公开
    自对准三重图案

    公开(公告)号：US20120085733A1

    公开(公告)日：2012-04-12

    申请号：US13042060

    申请日：2011-03-07

    申请人： Bencherki Mebarki ,  Hao Chen ,  Kedar Sapre ,  Anchuan Wang ,  Tushar Mandrekar ,  Jingmei Liang ,  Yongmei Chen ,  Christopher S. Ngai ,  Mehul Naik

    发明人： Bencherki Mebarki ,  Hao Chen ,  Kedar Sapre ,  Anchuan Wang ,  Tushar Mandrekar ,  Jingmei Liang ,  Yongmei Chen ,  Christopher S. Ngai ,  Mehul Naik

    IPC分类号： C23F1/02

    CPC分类号： H01L21/0337 ,  H01L21/0338

    摘要： Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned triple patterning (SATP) process. A stack of layers is patterned near the optical resolution of a photolithography system using a high-resolution photomask. The heterogeneous stacks are selectively etched to undercut a hard mask layer beneath overlying cores. A dielectric layer, which is flowable during formation, is deposited and fills the undercut regions as well as the regions between the heterogeneous stacks. The dielectric layer is anisotropically etched and a conformal spacer is deposited on and between the cores. The spacer is anisotropically etched to leave two spacers between each core. The cores are stripped and the spacers are used together with the remaining hard mask features to pattern the substrate at triple the density of the original pattern.

    摘要翻译： 本发明的实施例涉及使用自对准三重图案化（SATP）工艺在衬底上形成特征的方法。 使用高分辨率光掩模，在光刻系统的光学分辨率附近对一叠层进行图案化。 选择性地蚀刻异质堆叠以在覆盖的芯之下切割硬掩模层。 在形成期间可流动的介电层被沉积并填充底切区域以及异质堆叠之间的区域。 介电层被各向异性地蚀刻，并且保形间隔物沉积在芯之间和之间。 间隔物被各向异性蚀刻以在每个芯之间留下两个间隔物。 芯被剥离，并且间隔物与剩余的硬掩模特征一起使用以将原始图案的密度的三倍图案化。

    PLASMA SURFACE TREATMENT TO PREVENT PATTERN COLLAPSE IN IMMERSION LITHOGRAPHY
    9.
    发明申请
    PLASMA SURFACE TREATMENT TO PREVENT PATTERN COLLAPSE IN IMMERSION LITHOGRAPHY 审中-公开
    等离子体表面处理，以防止浸渍图中的图案褶皱

    公开(公告)号：US20110111604A1

    公开(公告)日：2011-05-12

    申请号：US13007963

    申请日：2011-01-17

    申请人： Eui Kyoon Kim ,  Deenesh Padhi ,  Huixiong Dai ,  Mehul Naik ,  Martin Jay Seamons ,  Bok Hoen Kim

    发明人： Eui Kyoon Kim ,  Deenesh Padhi ,  Huixiong Dai ,  Mehul Naik ,  Martin Jay Seamons ,  Bok Hoen Kim

    IPC分类号： H01L21/31

    CPC分类号： G03F7/091 ,  G03F7/11

    摘要： The present invention comprises a method of reducing photoresist mask collapse when the photoresist mask is dried after immersion development. As feature sizes continue to shrink, the capillary force of water used to rinse a photoresist mask approaches the point of being greater than adhesion force of the photoresist to the ARC. When the capillary force exceeds the adhesion force, the features of the mask may collapse because the water pulls adjacent features together as the water dries. By depositing a hermetic oxide layer over the ARC before depositing the photoresist, the adhesion force may exceed the capillary force and the features of the photoresist mask may not collapse.

    摘要翻译： 本发明包括当浸渍显影后干燥光致抗蚀剂掩模时减少光致抗蚀剂掩模塌陷的方法。 随着特征尺寸的不断缩小，用于冲洗光致抗蚀剂掩模的水的毛细管力接近光致抗蚀剂对ARC的粘附力。 当毛细管力超过粘附力时，面具的特征可能会因为水干燥而将相邻的特征拉到一起而崩溃。 通过在沉积光致抗蚀剂之前在ARC上沉积气密的氧化物层，粘合力可能会超过毛细管力，并且光致抗蚀剂掩模的特征可能不会崩溃。

    Air gap interconnects using carbon-based films
    10.
    发明授权
    Air gap interconnects using carbon-based films 有权
    气隙互连使用碳基薄膜

    公开(公告)号：US07928003B2

    公开(公告)日：2011-04-19

    申请号：US12249172

    申请日：2008-10-10

    申请人： Mehul Naik

    发明人： Mehul Naik

    IPC分类号： H01L21/00

    CPC分类号： H01L21/7682 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76885

    摘要： A method of forming an interconnect structure comprising: forming a sacrificial inter-metal dielectric (IMD) layer over a substrate, wherein the sacrificial IMD layer comprising a carbon-based film, such as amorphous carbon, advanced patterning films, porous carbon, or any combination thereof; forming a plurality of metal interconnect lines within the sacrificial IMD layer; removing the sacrificial IMD layer, with an oxygen based reactive process; and depositing a non-conformal dielectric layer to form air gaps between the plurality of metal interconnect lines. The metal interconnect lines may comprise copper, aluminum, tantalum, tungsten, titanium, tantalum nitride, titanium nitride, tungsten nitride, or any combination thereof. Carbon-based films and patterned photoresist layers may be simultaneously removed with the same reactive process. Highly reactive hydrogen radicals processes may be used to remove the carbon-based film and simultaneously pre-clean the metal interconnect lines prior to the deposition of a conformal metal barrier liner.

    摘要翻译： 一种形成互连结构的方法，包括：在衬底上形成牺牲金属间电介质（IMD）层，其中所述牺牲IMD层包括碳基膜，例如无定形碳，高级图案化膜，多孔碳或任何 的组合 在所述牺牲IMD层内形成多个金属互连线; 用氧基反应过程除去牺牲的IMD层; 以及沉积非共形绝缘层以在所述多个金属互连线之间形成气隙。 金属互连线可以包括铜，铝，钽，钨，钛，氮化钽，氮化钛，氮化钨或其任何组合。 可以使用相同的反应过程同时去除碳基膜和图案化的光致抗蚀剂层。 可以使用高反应性氢自由基方法去除碳基膜，同时在沉积保形金属屏障衬垫之前预先清洁金属互连线。