发明申请
- 专利标题: Submount and Method of Manufacturing the Same
- 专利标题(中): 基座及其制造方法
-
申请号: US13206389申请日: 2011-08-09
-
公开(公告)号: US20120012373A1公开(公告)日: 2012-01-19
- 发明人: Yoshikazu Oshika , Masayuki Nakano
- 申请人: Yoshikazu Oshika , Masayuki Nakano
- 申请人地址: JP Tokyo
- 专利权人: DOWA ELECTRONICS MATERIALS CO., LTD.
- 当前专利权人: DOWA ELECTRONICS MATERIALS CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2005-079985 20050318; JP2005-091941 20050328; JP2005-105044 20050331; JP2005-105045 20050331; JP2005-105046 20050331
- 主分类号: H05K1/09
- IPC分类号: H05K1/09 ; B05D3/00 ; B05D3/06 ; B05D5/00 ; B05D3/10
摘要:
A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 μm. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.
公开/授权文献
- US08581106B2 Submount 公开/授权日:2013-11-12
信息查询