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1.发明授权Solder layer and device bonding substrate using the same and method for manufacturing such a substrate 有权焊料层和使用其的器件接合衬底以及用于制造这种衬底的方法公开(公告)号：US08747579B2
公开(公告)日：2014-06-10
申请号：US12037958
申请日：2008-02-27
IPC分类号： C22F1/14
CPC分类号： H05K3/3463 , H01L24/29 , H01L24/33 , H01L24/45 , H01L24/73 , H01L24/83 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/2919 , H01L2224/32225 , H01L2224/32506 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83192 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/12036 , H01L2924/12041 , H01L2924/1301 , H01L2924/157 , H01L2924/15787 , H05K2201/0269 , H05K2203/1105 , H05K2203/1157 , Y10T29/49149 , Y10T428/24917 , H01L2924/00014 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2924/00015
摘要： A solder layer and an electronic device bonding substrate having high bonding strength of a device and low bonding failure even by a simplified bonding method of a device to a substrate and a method for manufacturing the same are provided.A device bonding substrate 1 including a substrate 2 and a lead free solder layer 5 formed on said substrate has a solder layer 5 consisting of a plurality of layers having mutually different phases, and oxygen concentration on the upper surface of the solder layer is lower than 30 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer 5. Carbon concentration on the upper surface of the solder layer 5 may be lower than 10 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer.
摘要翻译： 提供了一种焊接层和具有高的器件结合强度和低接合故障的电子器件接合衬底，即使通过简化的器件对衬底的接合方法及其制造方法也是如此。 包括形成在所述基板上的基板2和无铅焊料层5的器件接合基板1具有由具有相互不同相的多个层构成的焊料层5，焊料层的上表面的氧浓度低于 在构成焊料层5的上层的金属成分中最可氧化的金属成分的浓度的30原子％。焊料层5的上表面的碳浓度可以低于焊料层5的10原子％ 在构成焊料层的上层的金属成分中最可氧化的金属成分的浓度。
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2.发明申请SOLDER LAYER, HEAT SINK USING SUCH A SOLDER LAYER AND METHOD FOR MANUFACTURING SUCH A HEAT SINK 有权焊锡层，使用这种烧结层的散热器和制造这种散热器的方法公开(公告)号：US20100263849A1
公开(公告)日：2010-10-21
申请号：US12067355
申请日：2006-09-19
申请人： Masayuki Nakano , Yoshikazu Oshika
发明人： Masayuki Nakano , Yoshikazu Oshika
CPC分类号： C22C5/02 , B23K35/262 , B23K35/264 , B23K35/282 , B23K35/286 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K35/3033 , H01L21/50 , H01L23/3735 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2224/83192 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/157 , H01L2924/15724 , H01L2924/19107 , H01L2924/351 , H05K1/0306 , H05K1/111 , H05K3/3457 , H05K2201/09745 , Y02P70/611 , Y10T29/49393 , H01L2924/00014 , H01L2924/00015 , H01L2924/00
摘要： A heat sink (10) is disclosed which comprises a substrate (1), an electrode layer (2) formed on the substrate (1) and a solder layer (3) formed on the substrate (1) wherein the solder layer (3) provides a bonding strength of not less than 30 MPa and a shear strain of not less than 0.07. The heat sink may be a sub-mount which comprises a sub-mount substrate (1), an electrode layer (2) formed on the substrate (1) and a solder layer (3) formed on the substrate (1) wherein the electrode layer (2) is formed with a window portion (2A) having the solder layer (3) embedded therein and is connected to an outer peripheral area of the solder layer (3). A sub-mount that has a high strength of bonding between the solder layer (3) and a semiconductor device is provided at a reduced cost.
摘要翻译： 公开了一种散热器（10），其包括基板（1），形成在基板（1）上的电极层（2）和形成在基板（1）上的焊料层（3），其中焊料层（3） 提供不小于30MPa的接合强度和不小于0.07的剪切应变。 散热器可以是子安装件，其包括副安装基板（1），形成在基板（1）上的电极层（2）和形成在基板（1）上的焊料层（3），其中电极 层（2）形成有其中嵌入有焊料层（3）的窗口部分（2A），并且连接到焊料层（3）的外周区域。 以降低的成本提供了在焊料层（3）和半导体器件之间具有高粘合强度的子安装件。
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3.发明授权Solder layer, substrate for device joining utilizing the same and method of manufacturing the substrate 有权焊料层，利用其的器件接合用基板和制造基板的方法公开(公告)号：US08516692B2
公开(公告)日：2013-08-27
申请号：US12297438
申请日：2007-03-28
IPC分类号： H05K3/34
CPC分类号： H05K3/3463 , H01L24/29 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L33/62 , H01L2224/29 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/2919 , H01L2224/45144 , H01L2224/48227 , H01L2224/48472 , H01L2224/83192 , H01L2224/83801 , H01L2224/85 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/157 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/351 , H05K2201/10992 , Y10T29/49144 , Y10T29/49179 , H01L2924/00014 , H01L2924/00 , H01L2924/01083 , H01L2924/00015 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298
摘要： A solder layer, a substrate for device joining utilizing the same and a method of manufacturing the substrate are provided whereby the device joined remains thermally unaffected, an initial bonding strength in solder joint is enhanced and the device can be soldered reliably. The solder layer formed on a base substrate (2) consists of a plurality of layers (5a) of a solder free from lead, which are different in its phase from one another. They are constituted by a layer of a phase that is completely melted, and a layer of a phase that is not completely melted at a temperature not less than a eutectic temperature of the solder. The solder layer (5) can be applied to a device joining substrate (1) comprising an electrode layer (4) formed on the base substrate (2) and the solder layer (5) formed on the electrode layer.
摘要翻译： 提供焊料层，利用该焊料层的器件接合用基板和制造基板的方法，由此，接合部件保持热不受影响，提高了焊点的初期接合强度，并且可以可靠地焊接设备。 形成在基底基板（2）上的焊料层由多个彼此不同的焊料的不含铅的焊料层（5a）组成。 它们由完全熔化的相的层和在不低于焊料的共晶温度的温度下不完全熔化的相的层构成。 焊料层（5）可以应用于包括形成在基底基板（2）上的电极层（4）和形成在电极层上的焊料层（5）的装置接合基板（1）。
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公开(公告)号：US08581106B2
公开(公告)日：2013-11-12
申请号：US13206389
申请日：2011-08-09
申请人： Yoshikazu Oshika , Masayuki Nakano
发明人： Yoshikazu Oshika , Masayuki Nakano
IPC分类号： H05K1/09
CPC分类号： H05K1/111 , B23K35/001 , H01L21/4864 , H01L23/15 , H01L23/49811 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/83 , H01L2224/2908 , H01L2224/29082 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/83192 , H01L2224/838 , H01L2224/83825 , H01L2924/00014 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/15724 , H01L2924/351 , H05K1/0306 , H05K3/341 , H05K3/388 , Y02P70/611 , H01L2924/00 , H01L2924/0105 , H01L2924/01079 , H01L2924/01047 , H01L2924/0103 , H01L2924/01049 , H01L2924/01082 , H01L2224/48
摘要： A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 μm. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.
摘要翻译： 公开了一种具有在焊接中具有优异润湿性的电极层的基座及其制造方法。 用于安装半导体器件的基座（1）包括副安装座基板（2），形成在副安装座基板（2）的表面上的基板保护层（3），形成在基板保护层上的电极层（4） 层（3）和形成在所述电极层（3）上的焊料层（5），其中所述电极层（4）的平均表面粗糙度小于1μm。 电极层（4）的平均表面粗糙度降低，能够提高焊料层（5）的润湿性，使焊料层（5）和半导体装置牢固地结合在一起，而不会产生任何的焊剂。 从而获得了安装在其上的半导体器件的耐热性降低的基座（1），降低其温度升高并提高其性能和使用寿命。
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公开(公告)号：US08472208B2
公开(公告)日：2013-06-25
申请号：US11908861
申请日：2006-03-17
申请人： Yoshikazu Oshika , Masayuki Nakano
发明人： Yoshikazu Oshika , Masayuki Nakano
IPC分类号： H01R9/00
CPC分类号： H05K1/111 , B23K35/001 , H01L21/4864 , H01L23/15 , H01L23/49811 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/83 , H01L2224/2908 , H01L2224/29082 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/83192 , H01L2224/838 , H01L2224/83825 , H01L2924/00014 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/15724 , H01L2924/351 , H05K1/0306 , H05K3/341 , H05K3/388 , Y02P70/611 , H01L2924/00 , H01L2924/0105 , H01L2924/01079 , H01L2924/01047 , H01L2924/0103 , H01L2924/01049 , H01L2924/01082 , H01L2224/48
摘要： A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 μm. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.
摘要翻译： 公开了一种具有在焊接中具有优异润湿性的电极层的基座及其制造方法。 用于安装半导体器件的基座（1）包括副安装座基板（2），形成在副安装座基板（2）的表面上的基板保护层（3），形成在基板保护层上的电极层 层（3）和形成在所述电极层（3）上的焊料层（5），其中所述电极层（4）的平均表面粗糙度小于1μm。 电极层（4）的平均表面粗糙度降低，能够提高焊料层（5）的润湿性，使焊料层（5）和半导体装置牢固地结合在一起，而不会产生任何的焊剂。 从而获得了安装在其上的半导体器件的耐热性降低的基座（1），降低其温度升高并提高其性能和使用寿命。
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6.发明授权Solder layer, heat sink using such a solder layer and method for manufacturing such a heat sink 有权焊锡层，使用这种焊料层的散热器和制造这种散热器的方法公开(公告)号：US08310047B2
公开(公告)日：2012-11-13
申请号：US12067355
申请日：2006-09-19
申请人： Masayuki Nakano , Yoshikazu Oshika
发明人： Masayuki Nakano , Yoshikazu Oshika
IPC分类号： H01L23/34
CPC分类号： C22C5/02 , B23K35/262 , B23K35/264 , B23K35/282 , B23K35/286 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K35/3033 , H01L21/50 , H01L23/3735 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2224/83192 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/157 , H01L2924/15724 , H01L2924/19107 , H01L2924/351 , H05K1/0306 , H05K1/111 , H05K3/3457 , H05K2201/09745 , Y02P70/611 , Y10T29/49393 , H01L2924/00014 , H01L2924/00015 , H01L2924/00
摘要： A heat sink (10) is disclosed which comprises a substrate (1), an electrode layer (2) formed on the substrate (1) and a solder layer (3) formed on the substrate (1) wherein the solder layer (3) provides a bonding strength of not less than 30 MPa and a shear strain of not less than 0.07. The heat sink may be a sub-mount which comprises a sub-mount substrate (1), an electrode layer (2) formed on the substrate (1) and a solder layer (3) formed on the substrate (1) wherein the electrode layer (2) is formed with a window portion (2A) having the solder layer (3) embedded therein and is connected to an outer peripheral area of the solder layer (3). A sub-mount that has a high strength of bonding between the solder layer (3) and a semiconductor device is provided at a reduced cost.
摘要翻译： 公开了一种散热器（10），其包括基板（1），形成在基板（1）上的电极层（2）和形成在基板（1）上的焊料层（3），其中焊料层（3） 提供不小于30MPa的接合强度和不小于0.07的剪切应变。 散热器可以是子安装件，其包括副安装基板（1），形成在基板（1）上的电极层（2）和形成在基板（1）上的焊料层（3），其中电极 层（2）形成有其中嵌入有焊料层（3）的窗口部分（2A），并且连接到焊料层（3）的外周区域。 以降低的成本提供了在焊料层（3）和半导体器件之间具有高粘合强度的子安装件。
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公开(公告)号：US20120012373A1
公开(公告)日：2012-01-19
申请号：US13206389
申请日：2011-08-09
申请人： Yoshikazu Oshika , Masayuki Nakano
发明人： Yoshikazu Oshika , Masayuki Nakano
CPC分类号： H05K1/111 , B23K35/001 , H01L21/4864 , H01L23/15 , H01L23/49811 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/83 , H01L2224/2908 , H01L2224/29082 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/83192 , H01L2224/838 , H01L2224/83825 , H01L2924/00014 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/15724 , H01L2924/351 , H05K1/0306 , H05K3/341 , H05K3/388 , Y02P70/611 , H01L2924/00 , H01L2924/0105 , H01L2924/01079 , H01L2924/01047 , H01L2924/0103 , H01L2924/01049 , H01L2924/01082 , H01L2224/48
摘要： A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 μm. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.
摘要翻译： 公开了一种具有在焊接中具有优异润湿性的电极层的基座及其制造方法。 用于安装半导体器件的基座（1）包括副安装座基板（2），形成在副安装座基板（2）的表面上的基板保护层（3），形成在基板保护层上的电极层 层（3）和形成在所述电极层（3）上的焊料层（5），其中所述电极层（4）的平均表面粗糙度小于1μm。 电极层（4）的平均表面粗糙度降低，能够提高焊料层（5）的润湿性，使焊料层（5）和半导体装置牢固地结合在一起，而不会产生任何的焊剂。 从而获得了安装在其上的半导体器件的耐热性降低的基座（1），降低其温度升高并提高其性能和使用寿命。
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8.发明申请SOLDER LAYER AND ELECTRONIC DEVICE BONDING SUBSTRATE AND SUBMOUNT USING THE SAME 有权焊接层和电子设备连接基板和使用其的基板公开(公告)号：US20070228105A1
公开(公告)日：2007-10-04
申请号：US11694920
申请日：2007-03-30
IPC分类号： A47J36/02
CPC分类号： H05K3/3457 , B23K35/007 , B23K35/0233 , B23K35/025 , B23K35/262 , B23K35/3006 , B23K35/3013 , B23K35/383 , B23K2101/40 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L2224/29109 , H01L2224/29111 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01037 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/12041 , H01L2924/1301 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H05K3/341 , H05K2201/0317 , Y10T428/12528 , Y10T428/12889 , H01L2924/00014 , H01L2924/01083 , H01L2924/00015 , H01L2924/00
摘要： A solder layer and an electronic device bonding substrate using the layer are provided which avoid deteriorating qualities of the electronic device to be bonded. In a solder layer 14 free from lead and formed on a substrate 11 or an electronic device bonding substrate 10 having such a solder layer, the solder layer 14 has a specific resistance of not more than 0.4 Ω·μm. The electronic device bonding substrate 10 can have a thermal resistance of not more than 0.5 K/W and a thickness of not more than 10 μm. Then, voids contained in the solder layer 14 have a maximum diameter of not more than 0.5 μm and the substrate can be a submount substrate.
摘要翻译： 提供了使用该层的焊料层和电子器件接合基板，其避免了待接合的电子器件的质量劣化。 在没有引线并形成在基板11上的焊料层14或具有这种焊料层的电子器件接合基板10上，焊料层14的电阻率不超过0.4欧姆。 电子器件接合基板10可以具有不大于0.5K / W的热电阻和不大于10um的厚度。 然后，包含在焊料层14中的空隙的最大直径不大于0.5μm，并且基板可以是副安装座基板。
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9.发明授权Solder layer and electronic device bonding substrate and submount using the same 有权焊接层和电子器件接合基板和使用其的基座公开(公告)号：US08404359B2
公开(公告)日：2013-03-26
申请号：US11694920
申请日：2007-03-30
申请人： Yoshikazu Oshika , Masayuki Nakano
发明人： Yoshikazu Oshika , Masayuki Nakano
CPC分类号： H05K3/3457 , B23K35/007 , B23K35/0233 , B23K35/025 , B23K35/262 , B23K35/3006 , B23K35/3013 , B23K35/383 , B23K2101/40 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L2224/29109 , H01L2224/29111 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01037 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/12041 , H01L2924/1301 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H05K3/341 , H05K2201/0317 , Y10T428/12528 , Y10T428/12889 , H01L2924/00014 , H01L2924/01083 , H01L2924/00015 , H01L2924/00
摘要： A solder layer and an electronic device bonding substrate using the layer are provided which avoid deteriorating qualities of the electronic device to be bonded. In a solder layer 14 free from lead and formed on a substrate 11 or an electronic device bonding substrate 10 having such a solder layer, the solder layer 14 has a specific resistance of not more than 0.4 Ω·μm. The electronic device bonding substrate 10 can have a thermal resistance of not more than 0.5 K/W and a thickness of not more than 10 μm. Then, voids contained in the solder layer 14 have a maximum diameter of not more than 0.5 μm and the substrate can be a submount substrate.
摘要翻译： 提供了使用该层的焊料层和电子器件接合基板，其避免了待接合的电子器件的质量劣化。 在没有引线并形成在基板11上的焊料层14或具有这种焊料层的电子器件接合基板10上，焊料层14的电阻率不大于0.4μΩ·μm。 电子器件接合基板10可以具有不大于0.5K / W的热电阻和不大于10μm的厚度。 然后，包含在焊料层14中的空隙的最大直径不大于0.5μm，并且基板可以是副安装座基板。
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公开(公告)号：US20090207580A1
公开(公告)日：2009-08-20
申请号：US11908861
申请日：2006-03-17
申请人： Yoshikazu Oshika , Masayuki Nakano
发明人： Yoshikazu Oshika , Masayuki Nakano
CPC分类号： H05K1/111 , B23K35/001 , H01L21/4864 , H01L23/15 , H01L23/49811 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/83 , H01L2224/2908 , H01L2224/29082 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/83192 , H01L2224/838 , H01L2224/83825 , H01L2924/00014 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/15724 , H01L2924/351 , H05K1/0306 , H05K3/341 , H05K3/388 , Y02P70/611 , H01L2924/00 , H01L2924/0105 , H01L2924/01079 , H01L2924/01047 , H01L2924/0103 , H01L2924/01049 , H01L2924/01082 , H01L2224/48
摘要： A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 μm. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.
摘要翻译： 公开了一种具有在焊接中具有优异润湿性的电极层的基座及其制造方法。 用于安装半导体器件的基座（1）包括副安装座基板（2），形成在副安装座基板（2）的表面上的基板保护层（3），形成在基板保护层上的电极层（4） 层（3）和形成在所述电极层（3）上的焊料层（5），其中所述电极层（4）的平均表面粗糙度小于1μm。 电极层（4）的平均表面粗糙度降低，能够提高焊料层（5）的润湿性，使焊料层（5）和半导体装置牢固地结合在一起，而不会产生任何的焊剂。 从而获得了安装在其上的半导体器件的耐热性降低的基座（1），降低其温度升高并提高其性能和使用寿命。
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