发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
-
申请号: US13205029申请日: 2011-08-08
-
公开(公告)号: US20120012851A1公开(公告)日: 2012-01-19
- 发明人: Shunpei YAMAZAKI , Jun KOYAMA , Yasuyuki ARAI , Hideaki KUWABARA
- 申请人: Shunpei YAMAZAKI , Jun KOYAMA , Yasuyuki ARAI , Hideaki KUWABARA
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2000-069563 20000313
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.
公开/授权文献
- US08300201B2 Semiconductor device and a method of manufacturing the same 公开/授权日:2012-10-30
信息查询
IPC分类: