发明申请
- 专利标题: Conductive Sidewall for Microbumps
- 专利标题(中): 导电侧壁为Microbumps
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申请号: US12837717申请日: 2010-07-16
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公开(公告)号: US20120012998A1公开(公告)日: 2012-01-19
- 发明人: Arvind Chandrasekaran , Shiqun Gu , Christine S. Hay-Riege
- 申请人: Arvind Chandrasekaran , Shiqun Gu , Christine S. Hay-Riege
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/60 ; H01L21/768
摘要:
Electromigration in microbump connections causes voids in the microbumps, which reduces the lifetime of an integrated circuit containing the microbump. Electromigration lifetime may be increased in microbumps by forming a copper shell around the solder. The copper shell of one microbump contacts the copper shell of a second microbump to enclose the solder of the microbump connection. The copper shell allows higher current densities through the microbump. Thus, smaller microbumps may be manufactured on a smaller pitch without suffering failure from electromigration. Additionally, the copper shell reduces shorting or bridging between microbump connections on a substrate.
公开/授权文献
- US08482125B2 Conductive sidewall for microbumps 公开/授权日:2013-07-09
信息查询
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