发明申请
- 专利标题: SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DRIVING THE SAME
- 专利标题(中): 半导体存储器件及其驱动方法
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申请号: US13179839申请日: 2011-07-11
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公开(公告)号: US20120014163A1公开(公告)日: 2012-01-19
- 发明人: Shinobu Yamazaki , Yoshiji Ohta , Kazuya Ishihara , Mitsuru Nakura , Suguru Kawabata , Nobuyoshi Awaya
- 申请人: Shinobu Yamazaki , Yoshiji Ohta , Kazuya Ishihara , Mitsuru Nakura , Suguru Kawabata , Nobuyoshi Awaya
- 优先权: JP2010-162072 20100716; JP2011-078419 20110331
- 主分类号: G11C11/21
- IPC分类号: G11C11/21
摘要:
A semiconductor memory device includes a memory cell array where a plurality of memory cells are arranged in a matrix, each of the memory cells serially connecting a two-terminal type memory element and a transistor for selection, a first voltage applying circuit that applies a write voltage pulse to a bit line, and a second voltage applying circuit that applies a precharge voltage to a bit line and a common line. In writing the memory cell, after the second voltage applying circuit has both terminals of the memory cell previously precharged to the same voltage, the first voltage applying circuit applies the write voltage pulse to one terminal of the writing target memory cell via the bit line, and while the write voltage pulse is applied, the second voltage applying circuit maintains the application of the precharge voltage to the other terminal of the memory cell via the common line.
公开/授权文献
- US08482956B2 Semiconductor memory device and method of driving the same 公开/授权日:2013-07-09