发明申请
US20120018809A1 MOS DEVICE FOR ELIMINATING FLOATING BODY EFFECTS AND SELF-HEATING EFFECTS
审中-公开
用于消除浮动体效应和自加热效应的MOS器件
- 专利标题： MOS DEVICE FOR ELIMINATING FLOATING BODY EFFECTS AND SELF-HEATING EFFECTS
- 专利标题（中）： 用于消除浮动体效应和自加热效应的MOS器件
-
申请号： US13127276申请日： 2010-09-08
-
公开(公告)号： US20120018809A1公开(公告)日： 2012-01-26
- 发明人: Xiaolu Huang , Jing Chen , Xi Wang , Deyuan Xiao
- 申请人： Xiaolu Huang , Jing Chen , Xi Wang , Deyuan Xiao
- 申请人地址： CN Shanghai
- 专利权人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY
- 当前专利权人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY
- 当前专利权人地址： CN Shanghai
- 优先权： CN201010212125.2 20100625
- 国际申请： PCT/CN10/76705 WO 20100908
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A MOS device having low floating charge and low self-heating effects are disclosed. The device includes a connective layer coupling the active gate channel to the Si substrate. The connective layer provides electrical and thermal passages during device operation, which could eliminate floating effects and self-heating effects. An example of a MOS device having a SiGe connector between a Si active channel and a Si substrate is disclosed in detail and a manufacturing process is provided.
信息查询
IPC分类:
