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    Laser
    2.
    发明授权
    Laser 有权

    公开(公告)号：US11876340B2

    公开(公告)日：2024-01-16

    申请号：US17625780

    申请日：2019-12-26

    申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

    发明人： Shan Qiao ,  Zhinan Zeng ,  Xiaoyan Liang

    IPC分类号： H01S3/23 ,  H01S3/094 ,  H01S3/22

    CPC分类号： H01S3/2316 ,  H01S3/094096 ,  H01S3/2207

    摘要： The present invention provides a laser, including: a medium, having a ground state, an intermediate state, and an excited state in ascending order of energy; an excitation system, configured to excite electrons in the medium from the ground state to the intermediate state; and an excitation laser, configured to drive electrons in the intermediate state at different spatial positions in the medium to the ground state through a stimulated emission process with a fixed phase relationship, to generate a laser with a shorter relative wavelength. Due to the use of an excitation laser to drive electrons from the intermediate state, the photons generated by the stimulated emission have coherence, thereby forming a laser. In the present invention, an excitation system performing primary pumping combined with an excitation laser with a relatively long wavelength performing secondary pumping generate lasers with a relatively short wavelength, and the structure of the short-wavelength laser is simple, compact, and easy to be implemented. In addition, the cost of the short-wavelength laser can be reduced, and a laser with a shorter wavelength can be obtained.

    Method for characterizing graphene on platinum substrate
    4.
    发明授权
    Method for characterizing graphene on platinum substrate 有权

    公开(公告)号：US11774433B2

    公开(公告)日：2023-10-03

    申请号：US17952304

    申请日：2022-09-25

    申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

    发明人： He Kang ,  Guanghui Yu ,  Yanhui Zhang ,  Zhiying Chen

    IPC分类号： G01N33/208 ,  G01N21/78

    CPC分类号： G01N33/208 ,  G01N21/78

    摘要： A method for characterizing graphene on a platinum substrate, including: coating a methylene blue developing solution to a platinum substrate having a surface covered with graphene, so that the methylene blue developing solution reacts with hydrogen-containing gas under catalysis of platinum to yield colorless methylene white; after the pressure is restored, methylene white in the exposed area of platinum substrate will quickly turn blue when it is oxidized into methylene blue by reacting with oxygen in the air under catalysis of platinum. Thus, color difference can be formed to facilitate the observation of the graphene. The characterization method is highly reproducible and simple, and can be used to characterize graphene with a large area on a platinum substrate. The characterization method does not damage the graphene and platinum substrate, has no negative impact on the quality of graphene, and the platinum substrate can be recycled to reduce costs.

    METHOD FOR CHARACTERIZING GRAPHENE ON PLATINUM SUBSTRATE
    6.
    发明公开
    METHOD FOR CHARACTERIZING GRAPHENE ON PLATINUM SUBSTRATE 审中-公开

    公开(公告)号：US20230160868A1

    公开(公告)日：2023-05-25

    申请号：US17952304

    申请日：2022-09-25

    申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

    发明人： He KANG ,  Guanghui YU ,  Yanhui ZHANG ,  Zhiying CHEN

    IPC分类号： G01N33/208 ,  G01N21/78

    CPC分类号： G01N33/208 ,  G01N21/78

    摘要： A method for characterizing graphene on a platinum substrate, including: coating a methylene blue developing solution to a platinum substrate having a surface covered with graphene, so that the methylene blue developing solution reacts with hydrogen-containing gas under catalysis of platinum to yield colorless methylene white; after the pressure is restored, methylene white in the exposed area of platinum substrate will quickly turn blue when it is oxidized into methylene blue by reacting with oxygen in the air under catalysis of platinum. Thus, color difference can be formed to facilitate the observation of the graphene. The characterization method is highly reproducible and simple, and can be used to characterize graphene with a large area on a platinum substrate. The characterization method does not damage the graphene and platinum substrate, has no negative impact on the quality of graphene, and the platinum substrate can be recycled to reduce costs.

    Read-out circuit and read-out method for three-dimensional memory
    7.
    发明授权
    Read-out circuit and read-out method for three-dimensional memory 有权

    公开(公告)号：US11568931B2

    公开(公告)日：2023-01-31

    申请号：US15739723

    申请日：2017-04-25

    申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY

    发明人： Yu Lei ,  Houpeng Chen ,  Zhitang Song

    IPC分类号： G11C11/00 ,  G11C13/00

    摘要： A read-out circuit and a read-out method for a three-dimensional memory, comprises a read reference circuit and a sensitive amplifier, the read reference circuit produces read reference current capable of quickly distinguishing reading low-resistance state unit current and reading high-resistance state unit current. The read reference circuit comprises a reference unit, a bit line matching module, a word line matching module and a transmission gate parasitic parameter matching module. With respect to the parasitic effect and electric leakage of the three-dimensional memory in the plane and vertical directions, the present invention introduces the matching of bit line parasite parameters, leakage current and transmission gate parasitic parameters into the read reference current, and introduces the matching of parasitic parameters of current mirror into the read current, thereby eliminating the phenomenon of pseudo reading and reducing the read-out time.

    METHOD FOR PREPARING PATTERNED GRAPHENE
    8.
    发明申请
    METHOD FOR PREPARING PATTERNED GRAPHENE 有权

    公开(公告)号：US20220396485A1

    公开(公告)日：2022-12-15

    申请号：US17477573

    申请日：2021-09-17

    申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

    发明人： Hongyan ZHU ,  Tianru WU ,  Jiebin GU ,  Chao ZHANG ,  Boxiang GAO

    IPC分类号： C01B32/186

    摘要： The present disclosure provides a method for preparing patterned graphene, and the method includes using a silicon carbide base as a solid-state carbon source, decomposing the silicon carbide under the action of high temperature and catalyst, to directly grow graphene on an insulating substrate. Through a first patterned trench and a second patterned trench in an accommodating passage, the pattern of the formed graphene can be directly controlled. Therefore, the present disclosure can accurately locate the position of the patterned graphene on the insulating substrate, it does not require transferring the graphene one more time, thereby avoiding contaminating the graphene and damaging its structure, and there is no need for photo-lithography, ion etching and other processes to treat the graphene in order to obtain patterned graphene, which further avoids damages to the graphene.

    SILICON ON INSULATOR STRUCTURE AND METHOD OF MAKING THE SAME
    9.
    发明申请
    SILICON ON INSULATOR STRUCTURE AND METHOD OF MAKING THE SAME 有权

    公开(公告)号：US20220181150A1

    公开(公告)日：2022-06-09

    申请号：US17161318

    申请日：2021-01-28

    申请人： Zing Semiconductor Corporation ,  SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

    发明人： Xing WEI ,  Nan GAO ,  Zhongying XUE

    IPC分类号： H01L21/02 ,  H01L21/762 ,  H01L21/306

    摘要： A method of making a silicon on insulator structure comprises: providing a bonded structure, the bonded structure comprises the first substrate, the second substrate and the insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a first film; at a first temperature, performing a first etching to etch the first film to remove a first thickness of the first film; at a second temperature, performing a second etching to etch the first film to planarize the first film and remove a second thickness of the first film, the first temperature being lower than the second temperature, the first thickness being greater than the second thickness, and a sum of the first thickness and the second thickness being a total etching thickness of the first film.

    HEAT SHIELD DEVICE FOR INSULATING HEAT AND SMELTING FURNACE
    10.
    发明申请
    HEAT SHIELD DEVICE FOR INSULATING HEAT AND SMELTING FURNACE 有权

    公开(公告)号：US20220002902A1

    公开(公告)日：2022-01-06

    申请号：US17139942

    申请日：2020-12-31

    申请人： Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences ,  Zing Semiconductor Corporation

    发明人： Zhongying Xue ,  Yun Liu ,  Xing Wei ,  Zhan Li ,  Tao Wei ,  Minghao Li

    IPC分类号： C30B15/14 ,  C30B29/06

    摘要： Disclosed are a heat shield device for insulating heat and a smelting furnace. The heat shield device comprises a heat shield unit and a heat insulation unit. The heat shield unit comprises a shield bottom provided with a through hole, and a shield wall disposed on a side of the shield bottom opposite to the through hole. The heat insulation unit comprises a heat insulation part disposed above a layer plate of the shield bottom close to a liquid level of a crucible and a heat preservation part. The smelting furnace used for growth of monocrystalline silicon comprises the heat shield device, a crucible and a heater. The heat shield device of the present invention can increase a temperature gradient between the heat shield unit and the crucible, thereby facilitating rapid formation of silicon crystal bar and improving production efficiency of the silicon crystal bar.