发明申请
US20120018856A1 Semiconductor Device With Drift Regions and Compensation Regions
有权
具有漂移区域和补偿区域的半导体器件
- 专利标题： Semiconductor Device With Drift Regions and Compensation Regions
- 专利标题（中）： 具有漂移区域和补偿区域的半导体器件
-
申请号： US12842488申请日： 2010-07-23
-
公开(公告)号： US20120018856A1公开(公告)日： 2012-01-26
- 发明人: Joachim Weyers , Armin Willmeroth , Anton Mauder , Franz Hirler
- 申请人： Joachim Weyers , Armin Willmeroth , Anton Mauder , Franz Hirler
- 申请人地址： DE Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： DE Villach
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/22 ; H01L21/336
摘要：
Disclosed is a method of forming a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type, and a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type.