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    Semiconductor component and method for producing a semiconductor component
    3.
    发明授权
    Semiconductor component and method for producing a semiconductor component 有权
    半导体元件的制造方法及半导体元件的制造方法

    公开(公告)号：US08742539B2

    公开(公告)日：2014-06-03

    申请号：US13560626

    申请日：2012-07-27

    申请人： Joachim Weyers ,  Kevni Bueyuektas ,  Franz Hirler ,  Anton Mauder

    发明人： Joachim Weyers ,  Kevni Bueyuektas ,  Franz Hirler ,  Anton Mauder

    IPC分类号： H01L29/86

    CPC分类号： H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

    摘要： One aspect of the invention relates to a semiconductor component with a semiconductor body with a top side and with a bottom side. A first coil that is monolithically integrated with the semiconductor body is arranged distant from the bottom side and comprises N first windings, wherein N≧1. The first coil has a first coil axis that extends in a direction different from a surface normal of the bottom side.

    摘要翻译： 本发明的一个方面涉及具有顶侧和底侧的半导体本体的半导体部件。 与半导体本体整体地集成的第一线圈布置成远离底侧，并且包括N个第一绕组，其中N≥1。 第一线圈具有沿与底侧的表面法线不同的方向延伸的第一线圈轴线。

    Semiconductor device and integrated circuit including the semiconductor device
    5.
    发明授权
    Semiconductor device and integrated circuit including the semiconductor device 有权
    包括半导体器件的半导体器件和集成电路

    公开(公告)号：US08482029B2

    公开(公告)日：2013-07-09

    申请号：US13117908

    申请日：2011-05-27

    申请人： Anton Mauder ,  Franz Hirler ,  Joachim Weyers

    发明人： Anton Mauder ,  Franz Hirler ,  Joachim Weyers

    IPC分类号： H01L29/66

    CPC分类号： H01L27/088 ,  H01L29/0607 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7831 ,  H03K2217/0036

    摘要： A semiconductor device includes a source metallization and a semiconductor body. The semiconductor body includes a first field-effect structure including a source region of a first conductivity type electrically coupled to the source metallization. The semiconductor body also includes a second field-effect structure including a source region of the first conductivity type electrically coupled to the source metallization. A voltage tap including a semiconductor region within the semiconductor body is electrically coupled to a first gate electrode of the first field-effect structure by an intermediate inverter structure.

    摘要翻译： 半导体器件包括源极金属化和半导体本体。 半导体本体包括第一场效应结构，其包括与源极金属化电耦合的第一导电类型的源极区域。 半导体本体还包括第二场效应结构，其包括与源极金属化电耦合的第一导电类型的源极区域。 包括半导体本体内的半导体区域的电压抽头通过中间逆变器结构电耦合到第一场效应结构的第一栅电极。

    Depletion MOS transistor and charging arrangement
    6.
    发明授权
    Depletion MOS transistor and charging arrangement 有权
    消耗MOS晶体管和充电布置

    公开(公告)号：US08247874B2

    公开(公告)日：2012-08-21

    申请号：US12868918

    申请日：2010-08-26

    申请人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

    发明人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

    IPC分类号： H01L27/088

    CPC分类号： H01L29/7813 ,  H01L21/823487 ,  H01L27/0629 ,  H01L27/0883 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/4238 ,  H01L29/7803 ,  H01L29/7828

    摘要： A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region by a gate dielectric. The depletion transistor further includes a first discharge region of a second conductivity type arranged adjacent the gate dielectric and electrically coupled to a terminal for a reference potential. The depletion transistor can be included in a charging circuit.

    摘要翻译： 耗尽型晶体管包括源区和漏区，第一导电类型，第一导电类型的沟道区域布置在源区和漏区之间，第一栅电极邻近沟道区设置并与沟道介电绝缘 区域。 耗尽晶体管还包括第二导电类型的第一放电区域，其布置成邻近栅极电介质并且电耦合到用于参考电位的端子。 耗尽晶体管可以包括在充电电路中。

    Semiconductor Device Including a Diode
    8.
    发明申请
    Semiconductor Device Including a Diode 有权
    包括二极管的半导体器件

    公开(公告)号：US20130153916A1

    公开(公告)日：2013-06-20

    申请号：US13328371

    申请日：2011-12-16

    申请人： Joachim Weyers ,  Anton Mauder ,  Franz Hirler ,  Andreas Meiser ,  Ulrich Glaser

    发明人： Joachim Weyers ,  Anton Mauder ,  Franz Hirler ,  Andreas Meiser ,  Ulrich Glaser

    IPC分类号： H01L29/06

    CPC分类号： H01L27/0255 ,  H01L27/06 ,  H01L27/0814 ,  H01L29/407 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/8725

    摘要： One embodiment of an integrated circuit includes a semiconductor body. In the semiconductor body a first trench region extends into the semiconductor body from a first surface. The integrated circuit further includes a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench region. The other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region.

    摘要翻译： 集成电路的一个实施例包括半导体本体。 在半导体本体中，第一沟槽区域从第一表面延伸到半导体本体中。 集成电路还包括包括阳极区域和阴极区域的二极管。 阳极区域和阴极区域中的一个至少部分地布置在第一沟槽区域中。 阳极区域和阴极区域中的另一个包括从第一沟槽区域的外部邻接阳极区域和阴极区域中的一个的第一半导体区域。

    DEPLETION MOS TRANSISTOR AND CHARGING ARRANGEMENT
    9.
    发明申请
    DEPLETION MOS TRANSISTOR AND CHARGING ARRANGEMENT 有权
    绝缘MOS晶体管和充电装置

    公开(公告)号：US20120049273A1

    公开(公告)日：2012-03-01

    申请号：US12868918

    申请日：2010-08-26

    申请人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

    发明人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

    IPC分类号： H01L29/78 ,  H01L27/088

    CPC分类号： H01L29/7813 ,  H01L21/823487 ,  H01L27/0629 ,  H01L27/0883 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/4238 ,  H01L29/7803 ,  H01L29/7828

    摘要： A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region by a gate dielectric. The depletion transistor further includes a first discharge region of a second conductivity type arranged adjacent the gate dielectric and electrically coupled to a terminal for a reference potential. The depletion transistor can be included in a charging circuit.

    摘要翻译： 耗尽型晶体管包括源区和漏区，第一导电类型，第一导电类型的沟道区域布置在源区和漏区之间，第一栅电极邻近沟道区设置并与沟道介电绝缘 区域。 耗尽晶体管还包括第二导电类型的第一放电区域，其布置成邻近栅极电介质并电耦合到用于参考电位的端子。 耗尽晶体管可以包括在充电电路中。

    Semiconductor component including a lateral transistor component
    10.
    发明授权
    Semiconductor component including a lateral transistor component 有权
    半导体元件包括横向晶体管元件

    公开(公告)号：US08097880B2

    公开(公告)日：2012-01-17

    申请号：US12421346

    申请日：2009-04-09

    申请人： Joachim Weyers ,  Anton Mauder ,  Franz Hirler ,  Paul Kuepper

    发明人： Joachim Weyers ,  Anton Mauder ,  Franz Hirler ,  Paul Kuepper

    IPC分类号： H01L29/04

    CPC分类号： H01L29/872 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/405 ,  H01L29/42384 ,  H01L29/7393 ,  H01L29/7817 ,  H01L29/7824 ,  H01L29/78609 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78648

    摘要： A semiconductor component including a lateral transistor component is disclosed. One embodiment provides an electrically insulating carrier layer. A first and a second semiconductor layer are arranged on above another and are separated from another by a dielectric layer. The first semiconductor layer includes a polycrystalline semiconductor material, an amorphous semiconductor material or an organic semiconductor material. In the first semiconductor layer: a source zone, a body zone, a drift zone and a drain zone are provided. In the second semiconductor layer; a drift control zone is arranged adjacent to the drift zone, including a control terminal at a first lateral end for applying a control potential, and is coupled to the drain zone via a rectifying element at a second lateral end. A gate electrode is arranged adjacent to the body zone and is dielectrically insulated from the body zone by a gate dielectric layer.

    摘要翻译： 公开了一种包括横向晶体管元件的半导体元件。 一个实施例提供电绝缘载体层。 第一和第二半导体层被布置在另一个之上并且通过电介质层与另一个半导体层分开。 第一半导体层包括多晶半导体材料，非晶半导体材料或有机半导体材料。 在第一半导体层中提供源极区，体区，漂移区和漏区。 在第二半导体层中; 漂移控制区被布置成与漂移区相邻，包括用于施加控制电位的第一横向端的控制端，并且在第二横向端通过整流元件耦合到排水区。 栅极电极被布置成与身体区域相邻并且通过栅极介电层与身体区域介电绝缘。