A resistive memory cell is described, including a first electrode, a high-resistance ferroelectric material layer and a second electrode. The ferroelectric material layer has a first interface with the first electrode and has a second interface with the second electrode, wherein the second interface is not parallel with the first interface. A method of operating the resistive memory cell is also described, including applying between the first electrode and the second electrode a series of voltages, which has positive polarity and negative polarity alternately and has descending absolute values, to form in the ferroelectric material layer at least one domain wall with low resistance.