发明申请
US20120021589A1 METHOD OF FABRICATION OF A SEMICONDUCTOR DEVICE HAVING REDUCED PITCH
有权
具有减少电极的半导体器件的制造方法
- 专利标题： METHOD OF FABRICATION OF A SEMICONDUCTOR DEVICE HAVING REDUCED PITCH
- 专利标题（中）： 具有减少电极的半导体器件的制造方法
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申请号： US13248932申请日： 2011-09-29
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公开(公告)号： US20120021589A1公开(公告)日： 2012-01-26
- 发明人: Ming-Feng Shieh , Shinn-Sheng Yu , Anthony Yen , Shao-Ming Yu , Chang-Yun Chang , Jeff J. Xu , Clement Hsingjen Wann
- 申请人： Ming-Feng Shieh , Shinn-Sheng Yu , Anthony Yen , Shao-Ming Yu , Chang-Yun Chang , Jeff J. Xu , Clement Hsingjen Wann
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/30
摘要：
Provided is a photolithography apparatus including a photomask. The photomask includes a pattern having a plurality of features, in an example, dummy line features. The pattern includes a first region being in the form of a localized on-grid array and a second region where at least one of the features has an increased width. The apparatus may include a second photomask which may define an active region. The feature with an increased width may be adjacent, and outside, the defined active region.
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