发明申请
- 专利标题： Controlling Defects in Thin Wafer Handling
- 专利标题（中）： 控制薄晶片处理中的缺陷
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申请号： US12841874申请日： 2010-07-22
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公开(公告)号： US20120021604A1公开(公告)日： 2012-01-26
- 发明人: Yu-Liang Lin , Weng-Jin Wu , Jing-Cheng Lin
- 申请人： Yu-Liang Lin , Weng-Jin Wu , Jing-Cheng Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/302 ; H01L21/3065
摘要：
A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not covered by the wafer is removed, while the portion of the adhesive covered by the wafer is not removed.
公开/授权文献
- US08722540B2 Controlling defects in thin wafer handling 公开/授权日：2014-05-13
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