发明申请
- 专利标题： Confined Lateral Growth of Crystalline Material
- 专利标题（中）： 结晶材料的限制横向生长
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申请号： US13191682申请日： 2011-07-27
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公开(公告)号： US20120025195A1公开(公告)日： 2012-02-02
- 发明人: Kevin Andrew McComber , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
- 申请人： Kevin Andrew McComber , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
- 申请人地址： US MA Cambridge
- 专利权人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- 当前专利权人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- 当前专利权人地址： US MA Cambridge
- 主分类号： H01L29/161
- IPC分类号： H01L29/161 ; C30B19/00 ; H01L21/203 ; C30B23/04 ; H01L21/208 ; B05C11/00 ; C30B25/04
摘要：
In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral growth channel is provided between the upper and lower growth confinement layers, and is characterized by a height that is defined by the vertical separation between the upper and lower growth confinement layers. A growth seed is disposed at a site in the lateral growth channel for initiating crystalline material growth in the channel. A growth channel outlet is included for providing formed crystalline material from the growth channel. With this growth confinement structure, crystalline material can be grown from the growth seed to the lateral growth channel outlet.
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