公开(公告)号：US20120025195A1

公开(公告)日：2012-02-02

申请号：US13191682

申请日：2011-07-27

申请人： Kevin Andrew McComber ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

发明人： Kevin Andrew McComber ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

IPC分类号： H01L29/161 ,  C30B19/00 ,  H01L21/203 ,  C30B23/04 ,  H01L21/208 ,  B05C11/00 ,  C30B25/04

CPC分类号： C30B25/18 ,  C23C16/04 ,  C23C16/06 ,  C30B23/04 ,  C30B25/04 ,  C30B29/08 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/1281 ,  H01L29/66742 ,  H01L29/78684

摘要： In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral growth channel is provided between the upper and lower growth confinement layers, and is characterized by a height that is defined by the vertical separation between the upper and lower growth confinement layers. A growth seed is disposed at a site in the lateral growth channel for initiating crystalline material growth in the channel. A growth channel outlet is included for providing formed crystalline material from the growth channel. With this growth confinement structure, crystalline material can be grown from the growth seed to the lateral growth channel outlet.

摘要翻译： 在结晶材料生长的结构中，提供了较低的生长限制层和上部生长约束层，其设置在下部生长限制层的上方并与之垂直分离。 在上部和下部生长限制层之间提供横向生长通道，其特征在于由上部和下部生长限制层之间的垂直分隔限定的高度。 将生长种子设置在横向生长通道中的位置以引发通道中的结晶材料生长。 包括生长通道出口用于从生长通道提供形成的结晶材料。 利用这种生长限制结构，可以将结晶物质从生长种子生长到侧生长通道出口。