公开(公告)号：US12095002B2

公开(公告)日：2024-09-17

申请号：US17437606

申请日：2020-05-27

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L33/12 ,  C30B25/04 ,  C30B25/20 ,  C30B29/40 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32

CPC分类号： H01L33/12 ,  C30B25/04 ,  C30B25/20 ,  C30B29/403 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32

摘要： A group-III-nitride structure and a manufacturing method thereof are provided. In the manufacturing method, a first mask layer is first formed on a substrate; an uncoalesced second group-III-nitride epitaxial layer is formed by performing a first epitaxial growth with the first mask layer as a mask; and a second mask layer is formed at least on the second group-III-nitride epitaxial layer; a third group-III-nitride epitaxial layer is laterally grown and formed by performing a second epitaxial growth on the second group-III-nitride epitaxial layer with the second mask layer as a mask, where the second group-III-nitride epitaxial layer is coalesced by the third group-III-nitride epitaxial layer; a fourth group-III-nitride epitaxial layer is formed by performing a third epitaxial growth on the third group-III-nitride epitaxial layer.

公开(公告)号：US20240191391A1

公开(公告)日：2024-06-13

申请号：US18555197

申请日：2022-03-30

申请人： KYOCERA Corporation

发明人： Toshihiro KOBAYASHI ,  Takeshi KAMIKAWA ,  Yuta AOKI ,  Yuichiro HAYASHI

IPC分类号： C30B25/04 ,  C30B29/38 ,  C30B29/40 ,  H01L21/02 ,  H01L33/20

CPC分类号： C30B25/04 ,  C30B29/38 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/20

摘要： A semiconductor substrate includes a main substrate, a mask pattern located above the main substrate and including a mask portion, and a first semiconductor part and a second semiconductor part located above the mask pattern and adjacent to each other, in which the first semiconductor part includes a first lower edge located on the mask portion and a first protruding portion protruding toward the second semiconductor part side farther than the first lower edge.

公开(公告)号：US20240158953A1

公开(公告)日：2024-05-16

申请号：US18224396

申请日：2023-07-20

申请人： Korea Institute of Ceramic Engineering and Technology ,  Electronics and Telecommunications Research Institute

发明人： Dae-Woo JEON ,  Ji-Hyeon PARK ,  Jae-Kyoung MUN

IPC分类号： C30B25/04 ,  C30B25/10 ,  C30B25/16 ,  C30B25/22 ,  C30B29/16 ,  C30B29/38

CPC分类号： C30B25/04 ,  C30B25/10 ,  C30B25/165 ,  C30B25/22 ,  C30B29/16 ,  C30B29/38

摘要： Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.

公开(公告)号：US11862459B2

公开(公告)日：2024-01-02

申请号：US17844247

申请日：2022-06-20

申请人： HEXAGEM AB

发明人： Jonas Ohlsson ,  Lars Samuelson ,  Kristian Storm ,  Rafal Ciechonski ,  Bart Markus

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/12 ,  H01L33/16 ,  C30B25/04 ,  C30B25/18

CPC分类号： H01L21/02378 ,  C30B25/04 ,  C30B25/183 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/0265 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02603 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16

摘要： A semiconductor device having a planar III-N semiconductor layer includes a substrate including a wafer and a buffer layer of a buffer material different from a material of the wafer, the buffer layer having a growth surface, an array of nanostructures epitaxially grown from the growth surface, a continuous planar layer formed by coalescence of upper parts of the nanostructures at an elevated temperature T, where the number of lattice cells spanning a center distance between adjacent nanostructures are different at the growth surface and at the coalesced planar layer, and a growth layer epitaxially grown on the planar layer.

公开(公告)号：US20230313409A1

公开(公告)日：2023-10-05

申请号：US18194931

申请日：2023-04-03

申请人： Raytheon Technologies Corporation

发明人： Sergei F. Burlatsky ,  David U. Furrer

IPC分类号： C30B25/06 ,  C30B25/04 ,  C30B29/22

CPC分类号： C30B25/06 ,  C30B25/04 ,  C30B29/22

摘要： Disclosed herein is a suspension plasma spray process that comprises suspending metal oxide particles in a carrier fluid to produce a suspension. The suspension is ejected onto a substrate via a plasma flame. The particles are evaporated in the plasma flame to form a gaseous ceramic during their travel to the substrate. The gaseous ceramic is deposited on the substrate to form columnar grains.

公开(公告)号：US11694894B2

公开(公告)日：2023-07-04

申请号：US17239986

申请日：2021-04-26

申请人： FLOSFIA INC.

发明人： Yuichi Oshima ,  Katsuaki Kawara

IPC分类号： H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16 ,  H02M3/335

CPC分类号： H01L21/02565 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0262 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H02M3/33573 ,  H02M3/33576

摘要： A high-quality crystalline film having less impurity of Si and the like and useful in semiconductor devices is provided. A crystalline film containing a crystalline metallic oxide including gallium as a main component, wherein the crystalline film includes a Si in a content of 2×1015 cm−3 or less.

公开(公告)号：US20230033788A1

公开(公告)日：2023-02-02

申请号：US17937787

申请日：2022-10-04

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  C30B29/44 ,  H01L21/02 ,  G02F1/355 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

公开(公告)号：US11466384B2

公开(公告)日：2022-10-11

申请号：US16736274

申请日：2020-01-07

申请人： SLT Technologies, Inc

发明人： Mark P. D'Evelyn ,  Derrick S. Kamber

IPC分类号： C30B25/04 ,  C30B29/40 ,  C30B25/16 ,  C30B25/20

摘要： A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.

公开(公告)号：US20220267925A1

公开(公告)日：2022-08-25

申请号：US17661052

申请日：2022-04-28

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  C30B29/44 ,  H01L21/02 ,  G02F1/355 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

公开(公告)号：US20220236485A1

公开(公告)日：2022-07-28

申请号：US17159406

申请日：2021-01-27

申请人： Palo Alto Research Center Incorporated

发明人： Thomas Wunderer

IPC分类号： G02B6/122 ,  C30B25/04 ,  H01L21/02 ,  C30B29/40

摘要： A mask material is deposited on a substrate or growth template. The substrate or growth template is compatible with crystalline growth of a crystalline optical material. Patterned portions of the mask material are removed to expose one or more regions of the substrate or growth template. The one or more regions have target shapes of one or more optical components. The crystalline optical material is selectively grown in the one or more regions to form the one or more optical components.