发明申请
- 专利标题: Piezoelectric thin film element
- 专利标题(中): 压电薄膜元件
-
申请号: US13137580申请日: 2011-08-26
-
公开(公告)号: US20120025668A1公开(公告)日: 2012-02-02
- 发明人: Kazufumi Suenaga , Kenji Shibata , Fumihito Oka , Hideki Sato
- 申请人: Kazufumi Suenaga , Kenji Shibata , Fumihito Oka , Hideki Sato
- 申请人地址: JP Tokyo
- 专利权人: HITACHI CABLE, LTD.
- 当前专利权人: HITACHI CABLE, LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-311972 20081208; JP2009-114122 20090511
- 主分类号: H01L41/047
- IPC分类号: H01L41/047 ; H01L41/113 ; H01L41/09
摘要:
A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer, and a top electrode on a substrate. The piezoelectric layer includes, as a main phase, a perovskite-type oxide. The bottom electrode has a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. The bottom electrode has a (111) preferential orientation in a direction perpendicular to the substrate.
信息查询
IPC分类: