发明申请
US20120026790A1 Non-volatile memory device including block state confirmation cell and method of operating the same
审中-公开
包括块状态确认单元的非易失性存储器件及其操作方法
- 专利标题: Non-volatile memory device including block state confirmation cell and method of operating the same
- 专利标题(中): 包括块状态确认单元的非易失性存储器件及其操作方法
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申请号: US13137668申请日: 2011-09-01
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公开(公告)号: US20120026790A1公开(公告)日: 2012-02-02
- 发明人: Ju-hee Park , Jae-woong Hyun , Kyoung-lae Cho , Yoon-dong Park , Seung-hoon Lee , Kee-won Kwon
- 申请人: Ju-hee Park , Jae-woong Hyun , Kyoung-lae Cho , Yoon-dong Park , Seung-hoon Lee , Kee-won Kwon
- 优先权: KR10-2007-0061874 20070622
- 主分类号: G11C16/10
- IPC分类号: G11C16/10 ; G11C16/06 ; G11C16/04
摘要:
Provided are a semiconductor device having a block state confirmation cell that may store information indicating the number of data bits written to a plurality of memory cells, a method of reading memory data based on the number of the data bits written, and/or a memory programming method of storing the information indicating the number of the data bits written. The semiconductor device may include one or more memory blocks and a controller. Each of the memory blocks may include a plurality of memory cells each storing data, and a block state confirmation cell storing information indicating the number of data bits written to the memory cells. The controller may read the data bits from the memory blocks based on the number of data bits, which is indicated in the information in the block state confirmation cell.
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