Abstract:
A voltage generating circuit capable of generating a stable output voltage irrespective of a variation in external voltage. The voltage generating circuit includes a voltage comparing circuit that operates in response to an activation signal and outputs output voltage to a control node in response to a difference between a reference voltage and an internal voltage; an internal voltage control circuit that is connected to the control node, and receives the external voltage and controls the level of the internal voltage, which is applied to a load, in response to a voltage value of the control node, and an adjusting means for adjusting an amount of driving current flowing through the internal voltage control circuit by controlling the voltage level at the control node. The adjusting means may include any combination of a clamp circuit, a voltage compensating circuit, and a voltage drop circuit.
Abstract:
An output driver is responsive to an input signal and a swing width control signal (TE). The output driver is configured to generate an output signal having a first swing width (e.g., less than rail-to-rail) when the swing width control signal designates a normal mode of operation and a second swing width (e.g., rail-to-rail) when the swing width control signal designates a test mode of operation.
Abstract:
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device.
Abstract:
An organic light emitting display device having RFID includes a substrate including a pixel region having at least one organic light emitting device and a non-pixel region formed on the outer circumference of the pixel region, a sealing substrate that seals at least the pixel region of the substrate, an RFID antenna pattern on the sealing substrate, and an RFID chip electrically coupled to the RFID antenna pattern.
Abstract:
An organic light emitting display device having RFID includes a substrate including a pixel region having at least one organic light emitting device and a non-pixel region formed on the outer circumference of the pixel region, a sealing substrate that seals at least the pixel region of the substrate, an RFID antenna pattern on the sealing substrate, and an RFID chip electrically coupled to the RFID antenna pattern.
Abstract:
A sense amplifier including a pair of differential transistors configured to amplify a differential signal applied to a pair of I/O lines, each transistor having a terminal, a current supplying circuit configured to supply a current to the differential transistors in response to an enable signal, and a coupling element configured to electrically connect or disconnect the terminals of the differential transistors in response to the enable signal.
Abstract:
A memory device having a dual port function includes a memory cell array and a switching unit. The memory cell array has a first port and a second port. The switching unit assigns first data received through a data bus to the first port in response to a leading edge of a clock signal and assigns second data received through the data bus to the second port in response to a trailing edge of the clock. Methods of operating memory devices having a dual port mode are also disclosed.
Abstract:
A DAC circuit can include a plurality of current source circuits configured to operate responsive to respective different bias voltage signals and respective true and complementary binary digit signals.
Abstract:
A stacked memory device includes a plurality of memory layers, where at least one of the plurality of memory layers is stacked on another of the plurality of memory layers and each of the memory layers includes an array of memory cells, a first active circuit unit configured to classify and process address information for at least one of the memory cells as vertical address information and horizontal address information, and at least one second active circuit unit configured to generate a memory selection signal for at least one of the memory cells based on signals processed by the first active circuit unit.
Abstract:
Provided are a semiconductor device having a block state confirmation cell that may store information indicating the number of data bits written to a plurality of memory cells, a method of reading memory data based on the number of the data bits written, and/or a memory programming method of storing the information indicating the number of the data bits written. The semiconductor device may include one or more memory blocks and a controller. Each of the memory blocks may include a plurality of memory cells each storing data, and a block state confirmation cell storing information indicating the number of data bits written to the memory cells. The controller may read the data bits from the memory blocks based on the number of data bits, which is indicated in the information in the block state confirmation cell.