发明申请
US20120026805A1 SRAM BITCELL DATA RETENTION CONTROL FOR LEAKAGE OPTIMIZATION
有权
SRAM BITCELL数据保护控制用于泄漏优化
- 专利标题: SRAM BITCELL DATA RETENTION CONTROL FOR LEAKAGE OPTIMIZATION
- 专利标题(中): SRAM BITCELL数据保护控制用于泄漏优化
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申请号: US12846129申请日: 2010-07-29
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公开(公告)号: US20120026805A1公开(公告)日: 2012-02-02
- 发明人: Yukit TANG , Kuoyuan HSU
- 申请人: Yukit TANG , Kuoyuan HSU
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C5/14
摘要:
An integrated circuit includes a static random access memory (SRAM) array coupled to a first voltage supply node and a second voltage supply node. The first and second voltage supply nodes provide a retention voltage across the SRAM array. A current limiter is disposed between the SRAM array and the first voltage supply node, and a voltage regulator is coupled in parallel with the current limiter between the SRAM array and the first voltage supply node. The voltage regulator is configured to maintain the retention voltage across the SRAM array above a predetermined level.
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