发明申请
US20120026805A1 SRAM BITCELL DATA RETENTION CONTROL FOR LEAKAGE OPTIMIZATION 有权
SRAM BITCELL数据保护控制用于泄漏优化

SRAM BITCELL DATA RETENTION CONTROL FOR LEAKAGE OPTIMIZATION
摘要:
An integrated circuit includes a static random access memory (SRAM) array coupled to a first voltage supply node and a second voltage supply node. The first and second voltage supply nodes provide a retention voltage across the SRAM array. A current limiter is disposed between the SRAM array and the first voltage supply node, and a voltage regulator is coupled in parallel with the current limiter between the SRAM array and the first voltage supply node. The voltage regulator is configured to maintain the retention voltage across the SRAM array above a predetermined level.
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