THERMALLY RELEASABLE SHEET-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, METHOD OF COLLECTING SEMICONDUCTOR ELEMENT, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE

Invention Application

US20120028442A1 THERMALLY RELEASABLE SHEET-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, METHOD OF COLLECTING SEMICONDUCTOR ELEMENT, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权

Title translation: 用于半导体背面的热可释放片材集合膜，收集半导体元件的方法和制造半导体器件的方法

Please log in to see more content

Patent Title: THERMALLY RELEASABLE SHEET-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, METHOD OF COLLECTING SEMICONDUCTOR ELEMENT, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Patent Title (中): 用于半导体背面的热可释放片材集合膜，收集半导体元件的方法和制造半导体器件的方法
Application No.: US13190664

Application Date: 2011-07-26
Publication No.: US20120028442A1

Publication Date: 2012-02-02
Inventor: Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
Applicant: Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
Applicant Address: JP Osaka
Assignee: NITTO DENKO CORPORATION
Current Assignee: NITTO DENKO CORPORATION
Current Assignee Address: JP Osaka
Priority: JP2010-170919 20100729
Main IPC: H01L21/78
IPC: H01L21/78 ; C09J7/02 ; B32B7/06

THERMALLY RELEASABLE SHEET-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, METHOD OF COLLECTING SEMICONDUCTOR ELEMENT, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE

Abstract:

The present invention relates to a thermally releasable sheet-integrated film for semiconductor back surface, which includes: a pressure-sensitive adhesive sheet including a base material layer and a pressure-sensitive adhesive layer, and a film for semiconductor back surface formed on the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet, in which the pressure-sensitive adhesive sheet is a thermally releasable pressure-sensitive adhesive sheet whose peel force from the film for semiconductor back surface decreases upon heating.

Abstract(Chinese):

本发明涉及一种用于半导体背表面的可热分解的片状集成膜，其包括：包含基材层和压敏粘合剂层的压敏粘合片，以及在压力下形成的半导体背面的膜粘合片的粘合片的粘合剂层，其中粘合片是其半导体背面的膜的剥离力在加热时降低的可热剥离的压敏粘合片。

Public/Granted literature

US08652938B2 Thermally releasable sheet-integrated film for semiconductor back surface, method of collecting semiconductor element, and method of producing semiconductor device Public/Granted day:2014-02-18

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）