公开(公告)号：US09911683B2

公开(公告)日：2018-03-06

申请号：US13642325

申请日：2011-04-18

Applicant: Naohide Takamoto ,  Goji Shiga

Inventor： Naohide Takamoto ,  Goji Shiga

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L21/50 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544

CPC classification number: H01L23/48 ,  H01L21/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/54486 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/83862 ,  H01L2224/92125 ,  H01L2924/01019 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/3512

Abstract: The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

公开(公告)号：US09293387B2

公开(公告)日：2016-03-22

申请号：US13191791

申请日：2011-07-27

Applicant: Yusuke Komoto ,  Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

Inventor： Yusuke Komoto ,  Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC: H01L21/56 ,  H01L23/31 ,  H01L21/683 ,  C09J163/00 ,  H01L23/00

CPC classification number: H01L23/3157 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68386 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/31504 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2924/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在半导体元件倒装芯片的背面上，该半导体元件倒装芯片连接到被粘物上，其中在热固化之前用于倒装芯片型半导体背表面的膜， 其热固化，体积收缩率在23℃至165℃的范围内为100ppm /℃至400ppm /℃。

公开(公告)号：US08986486B2

公开(公告)日：2015-03-24

申请号：US13170581

申请日：2011-06-28

Applicant: Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC: B32B38/04 ,  C09J7/02 ,  H01L21/56 ,  H01L21/683 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H01L23/544

CPC classification number: H01L21/6836 ,  B32B37/1284 ,  B32B38/0004 ,  B32B38/10 ,  B32B2405/00 ,  B32B2457/14 ,  C09J7/20 ,  C09J165/00 ,  C09J2201/606 ,  C09J2203/326 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3164 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54406 ,  H01L2223/5442 ,  H01L2223/5448 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/27436 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29386 ,  H01L2224/73204 ,  H01L2224/81095 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  Y10T156/1052 ,  Y10T156/1064 ,  Y10T156/1075 ,  Y10T156/1077 ,  Y10T156/1082 ,  Y10T156/1093 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/1495 ,  Y10T428/15 ,  Y10T428/21 ,  H01L21/78 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099

Abstract: The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most ⅔ of the thickness of the separator.

Abstract translation: 本发明涉及一种用于半导体器件生产的膜，其包括：隔板; 以及多个粘附层附着的切割带，每个粘合剂层附着的切割带包括层合在切割带上的切割带和粘合剂层，它们以预定的间隔层压在隔板上，使得粘合剂层附着到隔板上，其中 分离器具有沿着切割带的外周形成的切口，并且切割深度为隔板的厚度的至多。。

公开(公告)号：US08896134B2

公开(公告)日：2014-11-25

申请号：US13642325

申请日：2011-04-18

Applicant: Naohide Takamoto ,  Goji Shiga

Inventor： Naohide Takamoto ,  Goji Shiga

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L21/78 ,  H01L21/50 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544

Abstract: The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

公开(公告)号：US08513816B2

公开(公告)日：2013-08-20

申请号：US13173226

申请日：2011-06-30

Applicant: Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC: H01L23/48 ,  H01L21/50 ,  C09K5/00 ,  B32B7/12 ,  B32B3/00

CPC classification number: C08K3/22 ,  C08K2201/001 ,  C08K2201/005 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/295 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81815 ,  H01L2224/83022 ,  H01L2224/83102 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/24355 ,  Y10T428/2848 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on the back surface of a semiconductor element to be flip chip-connected onto an adherend, the film containing a resin and a thermoconductive filler, in which the content of the thermoconductive filler is at least 50% by volume of the film, and the thermoconductive filler has an average particle size relative to the thickness of the film of at most 30% and has a maximum particle size relative to the thickness of the film of at most 80%.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，其将被设置在半导体元件的背面上以便倒装芯片连接到被粘物上，该薄膜含有树脂和导热填料，其中 导电填料的含量至少为膜的50体积％，并且导热填料相对于膜厚度的平均粒径为至多30％，并且具有相对于膜的厚度的最大粒径 电影最多80％。

公开(公告)号：US20130095639A1

公开(公告)日：2013-04-18

申请号：US13642229

申请日：2011-04-18

Applicant: Naohide Takamoto ,  Goji Shiga

Inventor： Naohide Takamoto ,  Goji Shiga

IPC: H01L21/78

CPC classification number: H01L21/78 ,  C09J7/20 ,  C09J2203/326 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/293 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68377 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/16258 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10T428/14 ,  H01L2924/01082 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00

Abstract: The present invention relates to a film for back surface of flip-chip semiconductor, which is to be formed on a back surface of a semiconductor element flip-chip connected onto an adherend, wherein an amount of shrinkage of the film for back surface of flip-chip semiconductor due to thermal curing is 2% by volume or more and not more than 30% by volume relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing. According to the film for back surface of flip-chip semiconductor according to the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, in the film for back surface of flip-chip semiconductor according to the present invention, since an amount of shrinkage due to thermal curing is 2% by volume or more relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing, a warp of a semiconductor element to be generated at the time of flip-chip connecting the semiconductor element onto an adherend can be effectively suppressed or prevented.

Abstract translation: 本发明涉及一种倒装芯片半导体背面用薄膜，其用于形成在与被粘物相连的半导体元件倒装芯片的背面上，其中，用于后翻表面的薄膜的收缩量 由于热固化，芯片半导体相对于热固化前的倒装芯片用半导体膜的总体积为2体积％以上且30体积％以下。 根据本发明的倒装芯片半导体的背面用薄膜，由于形成在倒装芯片连接在被粘物上的半导体元件的背面，所以具有保护半导体元件的功能。 另外，在本发明的倒装芯片半导体的背面用膜中，由于热固化时的收缩量相对于翻转半导体背面用膜的总体积为2体积％以上， 在热固化之前的芯片半导体，可以有效地抑制或防止将半导体元件倒装芯片连接到被粘物体时产生的半导体元件的翘曲。

公开(公告)号：US08420510B2

公开(公告)日：2013-04-16

申请号：US13530037

申请日：2012-06-21

Applicant: Takashi Oda ,  Naohide Takamoto ,  Hiroyuki Senzai

Inventor： Takashi Oda ,  Naohide Takamoto ,  Hiroyuki Senzai

IPC: H01L21/00

CPC classification number: H01L24/27 ,  H01L23/3114 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/27334 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/81193 ,  H01L2224/8191 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01029 ,  H01L2924/15787 ,  H01L2924/3512 ,  H01L2924/00

Abstract: Provided is a method of manufacturing a semiconductor device wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The method of manufacturing a semiconductor device of the present invention includes preparing a semiconductor wafer with a plurality of members for connection formed on both first and second surfaces; preparing a laminated film including a dicing sheet with a pressure-sensitive adhesive layer laminated on a base material, and a curable film that is laminated on the pressure-sensitive adhesive layer and has a thickness equivalent to or more than the height of the member for connection on the first surface; pasting the curable film of the laminated film to the semiconductor wafer while facing the curable film to the first surface so that the members for connection are not exposed to the pressure-sensitive adhesive layer; and dicing the semiconductor wafer to form a semiconductor element.

Abstract translation: 提供一种制造半导体器件的方法，其中可以容易且可靠地填充三维安装的半导体元件之间的空间。 本发明的半导体器件的制造方法包括：在第一和第二表面上制备具有多个用于连接的构件的半导体晶片; 制备包括层压在基材上的压敏粘合剂层的切割片的层压膜和层压在压敏粘合剂层上的厚度等于或大于该部件的高度的固化膜 第一面上的连接; 将所述层叠膜的固化膜粘贴到所述半导体晶片，同时将所述固化膜面向所述第一表面，使得所述连接构件不暴露于所述压敏粘合剂层; 并切割半导体晶片以形成半导体元件。

公开(公告)号：US20120326280A1

公开(公告)日：2012-12-27

申请号：US13530068

申请日：2012-06-21

Applicant: Takashi Oda ,  Naohide Takamoto ,  Hiroyuki Senzai

Inventor： Takashi Oda ,  Naohide Takamoto ,  Hiroyuki Senzai

IPC: H01L23/544 ,  B32B7/12 ,  C09J7/02 ,  H01L21/78

CPC classification number: H01L24/27 ,  C09J7/22 ,  C09J7/30 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2461/00 ,  C09J2463/00 ,  H01L23/29 ,  H01L23/3114 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/27334 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/81193 ,  H01L2224/8191 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01029 ,  H01L2924/15787 ,  Y10T428/2826 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/3512 ,  H01L2924/00

Abstract: Provided is a laminated film wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The laminated film of the present invention is a laminated film for filling the space between semiconductor elements that are electrically connected through a member or connection, the film including a dicing sheet in which a pressure-sensitive adhesive layer is laminated on a base material and a curable film that is laminated on the pressure-sensitive adhesive layer, wherein the curable film has a lowest melt viscosity at 50 to 200° C. of 1×102 Pa·s or more and 1×104 Pa·s or less.

Abstract translation: 提供一种层叠膜，其中可以容易且可靠地填充三维安装的半导体元件之间的空间。 本发明的层压膜是用于填充通过构件或连接电连接的半导体元件之间的空间的层压膜，该膜包括其中压敏粘合剂层层压在基材上的切割片和 层压在粘合剂层上的固化膜，其中固化膜在50〜200℃下的熔融粘度最低为1×102Pa·s以上且1×104Pa·s以下。

公开(公告)号：US20120028380A1

公开(公告)日：2012-02-02

申请号：US13192530

申请日：2011-07-28

Applicant: Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC: H01L21/78 ,  B32B3/00 ,  B32B37/00 ,  H01L21/66

CPC classification number: H01L21/6836 ,  B32B5/022 ,  B32B5/028 ,  B32B7/12 ,  B32B15/08 ,  B32B25/08 ,  B32B25/12 ,  B32B25/14 ,  B32B25/18 ,  B32B27/08 ,  B32B27/10 ,  B32B27/12 ,  B32B27/281 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B29/002 ,  B32B37/12 ,  B32B2250/44 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/302 ,  B32B2307/306 ,  B32B2307/414 ,  B32B2307/514 ,  B32B2307/54 ,  B32B2307/732 ,  B32B2457/14 ,  H01L21/78 ,  H01L22/20 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68386 ,  H01L2924/014 ,  Y10T156/10 ,  Y10T428/24355

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material having an asperities-formed surface, and a pressure-sensitive adhesive layer laminated on the base material, and a film for semiconductor back surface laminated on the pressure-sensitive adhesive layer of the dicing tape, in which the dicing tape has a haze of at most 45%.

Abstract translation: 本发明涉及一种半导体背面用切割带一体化膜，其特征在于，包括：具有凹凸形成面的基材和层叠在基材上的粘合剂层的切割带，以及用于 半导体背表面层叠在切割带的压敏粘合剂层上，其中切割带的雾度为至多45％。

公开(公告)号：US20120025404A1

公开(公告)日：2012-02-02

申请号：US13192068

申请日：2011-07-27

Applicant: Goji SHIGA ,  Naohide TAKAMOTO ,  Fumiteru ASAI

Inventor： Goji SHIGA ,  Naohide TAKAMOTO ,  Fumiteru ASAI

IPC: H01L23/28 ,  B32B7/12 ,  H01L21/56

CPC classification number: H01L23/3164 ,  C09J163/00 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68386 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on the back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface having a tensile storage elastic modulus at 25° C. after thermal curing within a range of from 10 GPa to 30 GPa, in which the tensile storage elastic modulus at 25° C. after thermal curing of the film for flip chip type semiconductor back surface falls within a range of from 4 times to 20 times the tensile storage elastic modulus at 25° C. before thermal curing thereof.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在与被粘物相连的半导体元件倒装芯片的背面上，该倒装芯片型半导体背表面膜的拉伸储能弹性模量为25 在热固化后在10GPa至30GPa的范围内的热固化温度，其中用于倒装芯片型半导体背表面的膜的热固化后25℃下的拉伸储存弹性模量落在4倍 至25℃下的拉伸储存弹性模量的20倍。