发明申请
- 专利标题: Stand-Alone Device
- 专利标题(中): 独立设备
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申请号: US13198458申请日: 2011-08-04
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公开(公告)号: US20120032291A1公开(公告)日: 2012-02-09
- 发明人: Christophe Regnier , Olivier Hinsinger , Daniel Gloria , Pascal Urard
- 申请人: Christophe Regnier , Olivier Hinsinger , Daniel Gloria , Pascal Urard
- 申请人地址: FR Montrouge FR Crolles
- 专利权人: STMicroelectronics SA,STMicroelectronics (Crolles 2) SAS
- 当前专利权人: STMicroelectronics SA,STMicroelectronics (Crolles 2) SAS
- 当前专利权人地址: FR Montrouge FR Crolles
- 优先权: FR10/56456 20100805
- 主分类号: H01L25/16
- IPC分类号: H01L25/16
摘要:
A stand-alone device comprising a silicon wafer having its front surface including a first layer of a first conductivity type and a second layer of a second conductivity type forming a photovoltaic cell; first vias crossing the wafer from the rear surface of the first layer and second vias crossing the wafer from the rear surface of the second layer; metallization levels on the rear surface of the wafer, the external level of these metallization levels defining contact pads; an antenna formed in one of the metallization levels; and one or several chips assembled on said pads; the metallization levels being shaped to provide selected interconnects between the different elements of the device.
公开/授权文献
- US09006851B2 Photovoltaic device with through-vias 公开/授权日:2015-04-14
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