发明申请
US20120032742A1 CMOS MILLIMETER-WAVE VARIABLE-GAIN LOW-NOISE AMPLIFIER
有权
CMOS MILLIMETER-WAVE VARIABLE-GAIN低噪声放大器
- 专利标题: CMOS MILLIMETER-WAVE VARIABLE-GAIN LOW-NOISE AMPLIFIER
- 专利标题(中): CMOS MILLIMETER-WAVE VARIABLE-GAIN低噪声放大器
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申请号: US12851705申请日: 2010-08-06
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公开(公告)号: US20120032742A1公开(公告)日: 2012-02-09
- 发明人: Hsieh-Hung HSIEH , Po-Yi WU , Ho-Hsiang CHEN , Chewn-Pu JOU , Fu-Lung HSUEH
- 申请人: Hsieh-Hung HSIEH , Po-Yi WU , Ho-Hsiang CHEN , Chewn-Pu JOU , Fu-Lung HSUEH
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H03G3/30
- IPC分类号: H03G3/30 ; H03F3/16 ; H03F1/22
摘要:
A low-noise amplifier (LNA) includes a first cascode gain stage coupled to an input node for increasing an amplitude of an RF input signal. A first variable gain network is coupled to the first cascode gain stage and includes a first inductor for boosting a gain of the first cascode gain stage, a first capacitor coupled to the first inductor for blocking a direct current (DC) voltage, and a first switch coupled to the first inductor and to the first capacitor. The first switch is configured to selectively couple the first inductor to the first cascode gain stage in response to a first control signal.
公开/授权文献
- US08279008B2 CMOS millimeter-wave variable-gain low-noise amplifier 公开/授权日:2012-10-02