Invention Application
US20120034786A1 Plasma Processing Chamber with Dual Axial Gas Injection and Exhaust
有权
具有双轴向气体注入和排气的等离子体处理室
- Patent Title: Plasma Processing Chamber with Dual Axial Gas Injection and Exhaust
- Patent Title (中): 具有双轴向气体注入和排气的等离子体处理室
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Application No.: US12850552Application Date: 2010-08-04
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Publication No.: US20120034786A1Publication Date: 2012-02-09
- Inventor: Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
- Applicant: Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; C23C16/00 ; H01L21/31

Abstract:
An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.
Public/Granted literature
- US08869742B2 Plasma processing chamber with dual axial gas injection and exhaust Public/Granted day:2014-10-28
Information query
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