发明申请
- 专利标题： OXIDE SEMICONDUCTOR
- 专利标题（中）： 氧化物半导体
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申请号： US13265254申请日： 2009-04-24
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公开(公告)号： US20120037901A1公开(公告)日： 2012-02-16
- 发明人: Kiyotaka Mori , Henning Sirringhaus , Kulbinder Kumar Banger , Rebecca Lorenz Peterson
- 申请人： Kiyotaka Mori , Henning Sirringhaus , Kulbinder Kumar Banger , Rebecca Lorenz Peterson
- 申请人地址： UK Cambridgeshire JP Osaka
- 专利权人： CAMBRIDGE ENTERPRISE LTD.,PANASONIC CORPORATION
- 当前专利权人： CAMBRIDGE ENTERPRISE LTD.,PANASONIC CORPORATION
- 当前专利权人地址： UK Cambridgeshire JP Osaka
- 国际申请： PCT/GB2009/001037 WO 20090424
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01B1/08 ; H01L21/20
摘要：
The present invention provides highly-stable oxide semiconductors which make it possible to provide devices having an excellent stability. The oxide semiconductor according to the present invention is an amorphous oxide semiconductor including at least one of indium (In), zinc (Zn), and Tin (Sn) and at least one of an alkaline metal or an alkaline earth metal having an ionic radius greater than that of gallium (Ga), and oxygen.