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公开(公告)号:US20120037901A1
公开(公告)日:2012-02-16
申请号:US13265254
申请日:2009-04-24
CPC分类号: H01L29/78693 , H01L29/247
摘要: The present invention provides highly-stable oxide semiconductors which make it possible to provide devices having an excellent stability. The oxide semiconductor according to the present invention is an amorphous oxide semiconductor including at least one of indium (In), zinc (Zn), and Tin (Sn) and at least one of an alkaline metal or an alkaline earth metal having an ionic radius greater than that of gallium (Ga), and oxygen.
摘要翻译: 本发明提供了高度稳定的氧化物半导体,其可以提供具有优异稳定性的器件。 根据本发明的氧化物半导体是包含铟(In),锌(Zn)和锡(Sn)中的至少一种和具有离子半径的碱金属或碱土金属中的至少一种的非晶氧化物半导体 大于镓(Ga)和氧。