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公开(公告)号:US20120037901A1
公开(公告)日:2012-02-16
申请号:US13265254
申请日:2009-04-24
CPC分类号: H01L29/78693 , H01L29/247
摘要: The present invention provides highly-stable oxide semiconductors which make it possible to provide devices having an excellent stability. The oxide semiconductor according to the present invention is an amorphous oxide semiconductor including at least one of indium (In), zinc (Zn), and Tin (Sn) and at least one of an alkaline metal or an alkaline earth metal having an ionic radius greater than that of gallium (Ga), and oxygen.
摘要翻译: 本发明提供了高度稳定的氧化物半导体,其可以提供具有优异稳定性的器件。 根据本发明的氧化物半导体是包含铟(In),锌(Zn)和锡(Sn)中的至少一种和具有离子半径的碱金属或碱土金属中的至少一种的非晶氧化物半导体 大于镓(Ga)和氧。
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公开(公告)号:US08883617B2
公开(公告)日:2014-11-11
申请号:US13609959
申请日:2012-09-11
IPC分类号: H01L21/368 , C23C18/12 , H01L29/786 , H01L29/66 , H01L21/02
CPC分类号: H01L29/7869 , C23C18/1216 , C23C18/1283 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/66742 , H01L29/66969
摘要: One aspect in the present disclosure relates to a method for manufacturing an amorphous metal oxide semiconductor. In an exemplary embodiment, a film is deposited on a substrate from a mixed solution as a starting element. For example, the mixed solution includes at least an indium alkoxide and a zinc alkoxide in a solvent. The film made from the mixed solution on the substrate is cured by thermal-annealing in a water vapor atmosphere, at a temperature range of, for example, 210 to 275 degrees Celsius, inclusive.
摘要翻译: 本公开的一个方面涉及一种用于制造非晶金属氧化物半导体的方法。 在一个示例性实施例中,将薄膜作为起始元件从混合溶液沉积在基底上。 例如,混合溶液在溶剂中至少包含烷氧基铟和烷氧化锌。 通过在例如210〜275摄氏度的温度范围的水蒸气气氛中进行热退火,使由基板上的混合溶液制成的膜固化。
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公开(公告)号:US06340768B1
公开(公告)日:2002-01-22
申请号:US09728998
申请日:2000-12-04
IPC分类号: C07F702
CPC分类号: C23C16/18 , C07F7/081 , C07F7/22 , C07F7/2208 , C07F7/30 , Y10S977/89 , Y10S977/891
摘要: Volatile metal complexes with &agr;-sila-&bgr;-diketonate ligands containing haloalkyl, and particularly, perfluoroalkyl, substitutents are useful as metal precursors for chemical vapor deposition processes and as nanostructured materials containing fluorous domains.
摘要翻译: 挥发性金属络合物与含有卤代烷基,特别是全氟烷基取代基的α-硅烷-β-二酮配体可用作化学气相沉积方法的金属前体和用作含有氟结构域的纳米结构材料。
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公开(公告)号:US06184403B2
公开(公告)日:2001-02-06
申请号:US09314311
申请日:1999-05-19
IPC分类号: C07F702
CPC分类号: C07F15/065 , C07F7/0803 , C07F7/081 , C07F13/005 , Y10S977/84 , Y10S977/89 , Y10S977/891 , Y10S977/92
摘要: Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
摘要翻译: 化学气相沉积工艺利用与含金属元素硅,锗,锡或铅的配体的前体挥发性金属配合物。
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5.
公开(公告)号:US6099903A
公开(公告)日:2000-08-08
申请号:US314762
申请日:1999-05-19
申请人: Alain E. Kaloyeros , John T. Welch , Paul J. Toscano , Rolf Claessen , Andrei Kornilov , Kulbinder Kumar Banger
发明人: Alain E. Kaloyeros , John T. Welch , Paul J. Toscano , Rolf Claessen , Andrei Kornilov , Kulbinder Kumar Banger
CPC分类号: C23C16/18 , C07F13/005 , C07F15/065 , C07F7/082
摘要: Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
摘要翻译: 化学气相沉积工艺利用与含金属元素硅,锗,锡或铅的配体的前体挥发性金属配合物。
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公开(公告)号:US06359159B1
公开(公告)日:2002-03-19
申请号:US09729115
申请日:2000-12-04
IPC分类号: C07F702
CPC分类号: C07F15/065 , C07F7/0803 , C07F7/081 , C07F13/005 , Y10S977/84 , Y10S977/89 , Y10S977/891 , Y10S977/92
摘要: Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
摘要翻译: 化学气相沉积工艺利用与含金属元素硅,锗,锡或铅的配体的前体挥发性金属配合物。
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