发明申请
- 专利标题: POWER ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 电力电子设备及其制造方法
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申请号: US13208671申请日: 2011-08-12
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公开(公告)号: US20120037958A1公开(公告)日: 2012-02-16
- 发明人: In-jun Hwang , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong
- 申请人: In-jun Hwang , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2010-0078484 20100813
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L21/335
摘要:
According to an example embodiment, a power electronic device includes a first semiconductor layer, a second semiconductor layer on a first surface of the first semiconductor layer, and a source, a drain, and a gate on the second semiconductor layer. The source, drain and gate are separate from one another. The power electronic device further includes a 2-dimensional electron gas (2DEG) region at an interface between the first semiconductor layer and the second semiconductor layer, a first insulating layer on the gate and a second insulating layer adjacent to the first insulating layer. The first insulating layer has a first dielectric constant and the second insulating layer has a second dielectric constant less than the first dielectric constant.