发明申请
- 专利标题： PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER
- 专利标题（中）： 具有氧化层的可编程电阻记忆体
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申请号： US13278240申请日： 2011-10-21
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公开(公告)号： US20120040496A1公开(公告)日： 2012-02-16
- 发明人: Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
- 申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
- 申请人地址： US CA Scotts Valley
- 专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人地址： US CA Scotts Valley
- 主分类号： H01L21/8239
- IPC分类号： H01L21/8239
摘要：
Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
公开/授权文献
- US08343801B2 Method of forming a programmable metallization memory cell 公开/授权日：2013-01-01
信息查询
IPC分类:
